Process for manufacturing a silicon carbide coated body

ABSTRACT

The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

The present invention relates to a new process for manufacturing asilicon carbide (SiC) coated body by depositing SiC in a chemical vapordeposition method using dimethyldichlorosilane (DMS) as the silanesource on a graphite substrate. A further aspect of the presentinvention relates to the new silicon carbide coated body, which can beobtained by the new process of the present invention, and to the usethereof for manufacturing articles for high temperature applications,susceptors and reactors, semiconductor materials, and wafer.

BACKGROUND OF THE INVENTION

SiC coated bodies are important products in various technical fields andare particularly useful for high temperature applications such assusceptors and wafer for applied materials and reactors, semiconductormaterials, chip manufacturing etc.

In particular in high temperature applications and when applied in highprecision devices it is of particular importance to provide SiC coatedbodies (SiC coated articles), which exhibit superior mechanicalproperties, such as a tight connection (adhesion) of the SiC coatinglayer to the underlying substrate. Further, high etch resistance, impactresistance, fracture toughness and/or crack resistance of the SiC coatedbody are of particular interest. To provide oxidation resistance of thecoated body it is further required to apply the SiC coating layerhomogeneously and continuously, providing an impervious coating layer onthe coated substrate surface.

The inventors of the present invention surprisingly found, that with thenew process as described herein, it is possible to deposit SiC not onlyas a layer coating the surface of the underlying graphite substrate, butto achieve the formation of SiC tendrils being formed of improveddeposited SiC material, growing into the pores of a porous graphitesubstrate. This provides SiC coated graphite articles with improvedphysical and mechanical properties. In particular, the formation oftendrils formed of the improved SiC material and extending into theporous graphite provides significantly improved mechanical properties asdescribed below in more detail.

Different methods for applying a SiC coating by chemical vapordeposition (CVD) onto various substrates exist, comprising methods usingDMS as the silane source in the CVD method (also designated as CVDprecursor) and the deposition of SiC onto carbonaceous substrates,including graphite.

GB 1,128,757 describes methods for preparing SiC and describes CVDmethods using either mixtures of hydrogen and a carbon-containingcompound and a silicon-containing compound or mixtures of hydrogen and acompound containing both carbon and silicon, to form silicon carbidecrystallized on heated surfaces as a dense, substantially impermeablefilm of predominantly beta-silicon carbide. In particular, the method iscontrolled to form stoichiometric silicon carbide. As a compoundcontaining both carbon and silicon the document mentions inter alia DMSwithout providing specific process conditions to control thestoichiometric SiC formation from DMS. The formation of tendrils, letalone particular process conditions to achieve the formation of SiCtendrils extending into the coated substrate are also not described.

Similarly JP2000-302576 describes methods for preparing SiC coatedgraphite material using CVD methods and mentioning inter alia DMS as apossible CVD precursor. However, therein the SiC is only deposited onthe surface of the graphite substrate and infiltration of a porousgraphite substrate with the Si-containing gas is discussed asdisadvantageous due to the difficulties in forming a uniform layer andin the additional costs for additional coating of the infiltratedintermediate layer. No specific process conditions for using DMS as aCVD precursor are disclosed nor can be found any teaching about apossible formation of tendrils extending into the coated substrate.

EP 0935013 A1 and EP 1072570 A1 both describe methods of depositing aSiC coating on graphite substrates and thereafter removing thesubstrate. Consequently, none of said documents teaches the formation ofSiC tendrils extending into the porous graphite to form a tightlyconnected SiC coating layer. Further, none of said documents describesspecific process conditions for achieving the effects of the presentinvention. In particular, EP 0935013 teaches quite high temperatureconditions for the CVD process. Although, both documents generallymention the possibility to use DMS as the CVD precursor, none of saiddocument teaches suitable process conditions to deposit substantiallystoichiometric SiC, i.e. SiC with a ratio of Si:C of 1:1 by using DMS.

U.S. Pat. No. 9,371,582 teaches a method of depositing SiC usingmicrowave plasma enhanced chemical vapor deposition (MPECVD). Said veryspecific plasma based process differs significantly from the processconditions described in the present invention and accordingly, it cannotbe concluded that similar effects could be achieved therewith as havebeen found within the present invention.

EP 0294047 A1 relates to a process for minimizing carbon content insemiconductor materials by pre-treating carbonaceous surfaces used forthe preparation of semiconductor materials and mentions the generalpossibility of coating graphite samples with SiC using CVD and forexample DMS as the CVD precursor. Particular process conditions toachieve the formation of SiC tendrils extending into the coatedsubstrate are not described.

EP 0121797 A2 describes the preparation of carbon-silicon compositearticles comprising the deposition of impermeable, uniform SiC-coatinglayers onto a starting substrate by CVD. Example 6 mentions the use ofDMS as CVD precursor for encasing substrate fibers with a film. Example9 mentions the deposition of a SiC coating by CVD usingmethylchlorosilane in and on molded granular graphite as the substrateto form an intermediate substrate. Particular process conditions toachieve the formation of SiC tendrils extending into a coated porousgraphite substrate are not described.

U.S. Pat. No. 4,976,899 A describes the deposition of SiC onto a porouscomposite matrix comprising reinforcing carbon fibers coated with carbonand SiC, which are embedded in a deformable resin and carbon-basedmatrix by the well-known chemical vapor deposition (CVD) method usinge.g. DMS in the presence of methane and hydrogen. Therein, the compositematrix is covered by a SiC coating layer, which may penetrate andimpregnate the porous structure of the resin substrate. The SiC coatinglayer applied therein exhibits cracks, which have to be filled andsealed subsequently by applying a further outer coating layer, e.g. analuminum or hafnium nitride coating and a further outer alumina coatingor a borosilicate glass to provide a coated article which fulfills therequired heat protection and oxidation resistance sufficiently.Particular process conditions to achieve the formation of SiC tendrilsextending into a homogenously coated porous graphite substrate are notdescribed.

U.S. Pat. No. 3,925,577 A describes a process for producing a coatedisotropic graphite member comprising depositing a layer of silicon on aporous graphite body by a gas phase reaction at a temperature below themelting point of the silicon, followed by heating the graphite memberwith the applied layer of silicon to a temperature to cause the siliconto melt and penetrate the pores of the graphite and cause the silicon toreact in situ with the graphite to form a layer of silicon carbide andfurther depositing by a gas phase reaction a sealing layer of siliconcarbide over the underlying, previously reacted silicon carbide layer.The graphite used therein is defined to exhibit a porosity equal toabout 18% to 25% of the member volume, which inter alia is described tobe mandatory to provide silicon carbide coated-isotropic fine graingraphite with the desired strength properties. Departing from thedefined graphite characteristics is said to lead to compositesexhibiting separated, cracked or spalled coating in high temperatureapplications. The process described therein comprises the mandatory stepof surface cleaning the heat treated isotropic graphite member, therebyremoving all loose surface particles, prior to subjecting the graphitearticle to the SiC coating step. The CVD method described therein iscarried out using silicon tetrachloride as the CVD precursor in thepresence of hydrogen and methane. Argon may also be present as an inertgas. The use of DMS as the CVD precursor or silane source is notmentioned. Particular process conditions to achieve the improved SiCcoated articles of the present invention with the formation of SiCtendrils extending into a coated porous graphite substrate are notdescribed.

US2012/040139 and the corresponding U.S. Pat. No. 9,145,339 describe avery similar process of depositing SiC by allowing molten silicon topenetrate into a porous substrate material. Said substrate is describedto have a porosity degree of 25 to 45%. Allowing molten silicon topenetrate into a porous substrate requires the presence of large pores,which is reflected in the high porosity degree, similar as in the abovediscussed U.S. Pat. No. 3,925,577 A. Large pores and a high porositydegree is, however, detrimental to the mechanical properties andstrength of the graphite substrate. Further, by using molten silicon nohighly crystalline SiC can be obtained but merely amorphous SiC, whichcan be seen from FIG. 9 below.

Also US2018/002236 (and JP2002-003285, cited therein as prior artdocument 1) relate to a process of depositing SiC on porous substratewith a comparably high porosity degree of 12 to 20% with a preferredporosity degree of at least 15%. It is stated therein, that SiC cannotbe deposited by CVD methods in the depth of the substrate unless theporosity is 15 to 50%. In both documents DMS as a CVD precursor ismentioned only generally. Both documents describe particular processconditions only for different CVD precursor materials, such as in theexample of US 2018/002236 the use of methyltrichlorosilane (MTS) todeposit SiC on a substrate with a porosity degree of 16%. In theexamples of the cited JP2002-003285 the CVD precursor is alsomethyltrichlorosilane without specifying a specific porosity degree.With the process described therein, it is not possible to deposit theimproved crystalline SiC material according to the present invention ina graphite substrate with lower porosity. With the process describedtherein also no tendrils according to the present invention can beformed.

U.S. Pat. No. 3,406,044 A describes a process for preparing resistantheating elements, comprising the application of silicon onto acarbonaceous material by using chemical vapor deposition oftrichlorosilane. With the process applied therein a silicon layer isapplied to the substrate, which penetrates into the porous substrate andconverts therein to a certain amount into SiC. With the processdescribed therein a silicon layer is applied, which comprises SiC to acertain but comparably small amount of about 9%. It is further describedtherein, that an applied SiC coating does not penetrate through thepores of the graphite substrate in a considerable amount but forms arather gas-tight impervious coating on the surface of the graphite. Theuse of DMS as the CVD precursor is not mentioned. Particular processconditions to achieve the improved SiC coated articles of the presentinvention with the formation of SiC tendrils extending into a coatedporous graphite substrate are not described.

U.S. Pat. No. 3,622,369 describes a process for depositingstoichiometric silicon carbide on resistively heated wires, usingmethyldichlorosilane and hydrogen together with a carbonizing gas suchas methane in the CVD method. It is described, that with the use of saidspecific mixture of methyldichlorosilane as the silane source withhydrogen and methane the formation of silicon carbide filaments occurs.However, it is neither described therein, that such SiC filaments maygrow into a porous graphite substrate nor that such filaments may beformed under different CVD reaction conditions such as with other CVCprecursor materials like DMS in the presence of hydrogen without addingmethane gas. In particular, process conditions to achieve the improvedSiC coated articles of the present invention with the formation of SiCtendrils extending into a coated porous graphite substrate are notdescribed.

GB 1,021,662 describes a method of filling pores of a porous substrateby chemical vapor deposition of organosilicon compounds by treatingporous bodies with the aim to reduce the porosity and permeabilitythereof. Porous bodies as described therein mainly relate to siliconcarbide bodies but also graphite, alumina and other porous inorganicbodies are mentioned. The reduction of the porosity is carried outtherein by depositing SiC in the pores of the porous bodies usingchemical vapor deposition of organosilicon compounds. Preferredorganosilicon compounds are used which provide a SiC C ratio of 1:1. Asdimethyldichlorosilane per se is not suitable to provide such 1:1 ratio,this organosilicon compound is mentioned as possible CVD precursor onlyin combination with a silicon-yielding compound such as SiCl₄. Further,only one concrete Example describes the deposition of SiC on a carbonsubstrate, which is Example 3, wherein SiC is deposited on a piece ofelectrographite having 18% porosity by carrying out the CVD in thepresence of CH₃SiCl₃. According to said Example 3 the porosity can bereduced to 15%, which indicates that the pore filling can only beachieved to a low degree. Particular process conditions to achieve theimproved SiC coated articles of the present invention with the formationof SiC tendrils extending into a coated porous graphite substrate arenot described.

D. Cagliostro and S. Riccitiello (J. Am. Ceram. Soc., 73 (3) 607-14;1990) describe the analysis of pyrolysis products ofdimethyldichlorosilane (DMS) in CVD methods using argon as purge gas.Said publication teaches, that the volatility, transport properties andreaction kinetics of the fractions formed in the CVD process affect theability to penetrate, condense in and/or coat porous media and thereforeaffect morphology, densification and/or mechanical properties. Thisclearly supports the finding of the present invention that the veryspecific process conditions are critical to achieve the surprisingeffects described herein. For example the specific selection of the CVDprecursor, the purge gas, the CVD conditions such as temperature,pressure and deposition time have been found to significantly influencethe results in the CVD process.

Byung Jin Choi (Journal of Materials Science Letters 16, 33-36; 1997)confirms this. Therein the change of the structure of SiC deposited in aCVD method using different CVD precursor and applying varying CVDconditions (e.g. different temperatures) have been investigated. Interalia DMS has been used as a CVD precursor at different temperatures andthe formation of stoichiometric SiC has been observed. However, as canbe seen therein, under the applied CVD conditions only amorphous SiC isdeposited as shown therein (FIG. 7a ) and as can be seen in the XRDpattern (FIG. 3), varying temperatures significantly influence theformation of SiC and of by-products. Further, said publication does notdescribe to deposit SiC on a porous substrate and accordingly does notdescribe the formation of SiC tendrils extending into a poroussubstrate.

OBJECT OF THE INVENTION

One object of the present invention was to provide a new process, whichallows to prepare articles comprising a SiC coated graphite substrate,which avoid the disadvantages of the prior art processes.

A further object of the present invention was to provide a process beingable to provide SiC coated articles, wherein the SiC coating forms atightly connected layer on the underlying graphite substrate.

A further object of the present invention was to provide a processavoiding the formation of cracks and spallings in the SiC coating

A further object of the present invention was to provide a process forpreparing a SiC coated graphite substrate article in a cost and timeefficient manner by reducing the required process steps as far aspossible.

A further object of the present invention was to provide a process forpreparing graphite substrate based articles with a SiC coatingexhibiting on the one hand sufficient mechanical resistance and strengthand on the other hand also a maximum of continuity and homogeneity sothat the application of additional coatings or sealing layers, e.g. toseal occurring cracks, is not necessary.

A further object of the present invention was to provide a new andimproved SiC coated graphite substrate body having the desired improvedproperties as described herein.

A particular object of the present invention was to provide a new andimproved SiC coated graphite substrate body having excellent mechanicalstrength, SiC deposited thereon with improved properties andcharacteristics and comprising a SiC coating which forms a layer that istightly connected with the underlying graphite substrate. A furtherobject of the present invention was to provide a new and improved SiCcoated graphite substrate body having improved SiC characteristics withrespect to SiC deposition and infiltration, SiC crystallinity, density,purity, Si:C ratio and/or strength.

A further object of the present invention was to provide a new andimproved SiC coated graphite substrate body having improved graphitecharacteristics with respect to grain size, density and/or porosity.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body with an essentially pure SiC coating.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body with an improved SiC material depositedthereon and/or therein.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body with an improved SiC material of highcrystallinity and/or a high degree of tetrahedral crystallinity and/orcomprising low amounts of amorphous SiC.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body with a significantly low content of freeSi in the SiC coating.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having an improved averaged coefficientof thermal expansion between the graphite substrate and the SiC coatinglayer.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having an improved residual compressiveload in the SiC layer.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having an improved impact resistance.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having an improved fracture toughness.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having an improved exfoliation, peelingand/or warpage resistance.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having an improved adhesion between thegraphite substrate and the SiC coating layer.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body exhibiting an improved relation betweenthe size of the outer (upper) surface of the SiC coating layer to thesize of the interfacial layer being formed by the SiC tendrils extendinginto the porous graphite substrate.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having a multilayer SiC coating.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body having such a multilayer SiC coating,wherein at least two SiC layers of different porosity and/or density arepresent.

A further object of the present invention was to provide an improved SiCcoated graphite substrate body as described herein, further having sucha multilayer SiC coating.

A further object of the present invention was to provide a new processfor preparing such improved SiC coated graphite substrate bodies.

A further object of the present invention was to provide a new methodfor depositing stoichiometric SiC on a substrate in a CVD method.

A further object of the present invention was to provide a new methodfor depositing stoichiometric SiC on a substrate in a CVD method withoutadding methane gas.

A further object of the present invention was to provide an improvedgraphite substrate, in particular for the use and the applications asdescribed herein.

A further object of the present invention was to provide such animproved graphite substrate having improved purity.

A further object of the present invention was to provide such animproved graphite substrate having a modified surface porosity.

A further object of the present invention was to provide such animproved graphite substrate having small pores with enlarged surfacepore diameters.

A further object of the present invention was to provide such animproved graphite substrate having a specific chlorine content.

A further object of the present invention was to provide a new methodfor preparing such an improved graphite substrate.

A further object of the present invention was to provide an activatedgraphite substrate with a modified surface porosity, in particular forthe use and the applications as described herein.

A further object of the present invention was to provide such anactivated graphite substrate having an improved purity.

A further object of the present invention was to provide such anactivated graphite substrate having a specific chlorine content.

A further object of the present invention was to provide a new methodfor preparing such an activated graphite substrate.

A further object of the present invention was to provide a new methodfor depositing SiC on a substrate in a CVD method without using argon aspurge gas.

The inventors of the present invention surprisingly found that theseobjects can be solved by the new process according to the presentinvention, which is described in detail as follows.

Preferred Embodiments of the Invention

The independent claims describe embodiments of the present invention forsolving at least one of the above mentioned objects of the invention.The dependent claims provide further preferred embodiments, whichcontribute to solving at least one of the above mentioned objects of theinvention.

-   [1] Process for manufacturing a silicon carbide (SiC) coated body in    a chemical vapor deposition (CVD) method, using graphite with an    open porosity as a substrate and using dimethyldichlorosilane as the    silicon source and H₂ as purge gas to form substantially    stoichiometric silicon carbide, having a Si:C ratio of 1:1, with    substantially tetrahedral SiC crystals on the porous graphite    substrate, wherein the CVD process is carried out at a temperature    in the range of 1000 to 1200° C. under atmospheric pressure.-   [2] The process according to embodiment [1], wherein the use of    additional silane sources besides dimethyldichlorosilane and/or the    addition of methane gas and/or of argon is excluded.-   [3] The process according to embodiment [1] or [2], wherein the CVD    process is carried out for a time period of at least 30 minutes.-   [4] The process according to anyone of the preceding embodiments,    wherein the CVD process is carried out for a time period of >30    minutes and <12 hours, preferably of >45 minutes and <10 hours, more    preferably for at least one hour, more preferably for <10 hours,    preferably for <8 hours, preferably for <6 hours, preferably for <4    hours, preferably for <3 hours, most preferred within 1 to 2 hours.-   [5] The process according to anyone of the preceding embodiments,    wherein the dimethyldichlorosilane is passed into the reaction    chamber in a gaseous mixture with H₂.-   [6] The process according to anyone of the preceding embodiments,    wherein the mixture of the dimethyldichlorosilane and H₂ is obtained    by introducing the H₂ gas into the tank containing the    dimethyldichlorosilane, bubbling the H₂ through the tank and passing    the mixture of the dimethyldichlorosilane and H₂ into the reaction    chamber by pushing the mixture from the top of the tank.-   [7] The process according to anyone of the preceding embodiments,    wherein the CVD process is carried out with a total flow rate of the    mixture of DMS and H₂ of 25 to 200 slpm, preferably 40 to 180 slpm,    more preferably 60 to 160 slpm.-   [8] The process according to anyone of the preceding embodiments,    wherein the dimethyldichlorosilane comprises a content of siloxane    impurities of >0 to 2.000 wt. %, preferably >0 to 1.500 wt. %,    preferably >0 to <1.040 wt. %, preferably >0 to 1.000 wt. %,    preferably >0 to 0.900 wt. %, preferably >0 to 0.850 wt. %,    preferably >0 to 0.800 wt. %, preferably >0 to 0.750 wt. %,    preferably >0 to 0.700 wt. %, preferably >0 to 0.600 wt. %,    preferably >0 to 0.500 wt. %.-   [9] The process according to anyone of the preceding embodiments,    wherein the dimethyldichlorosilane comprises a content of    -   Mn metal element of <150 ppb wt., preferably <100 ppb wt.,        preferably <50 ppb wt., preferably <40 ppb wt., preferably <30        ppb wt., preferably <20 ppb wt.; and/or Cu metal element of <50        ppb wt., preferably <45 ppb wt., preferably ≤40 ppb wt.,        preferably ≤35 ppb wt., preferably ≤30 ppb wt., preferably ≤25        ppb wt.; and/or Zn metal element of <50 ppb wt., preferably <45        ppb wt., preferably ≤40 ppb wt., preferably ≤35 ppb wt.,        preferably ≤30 ppb wt., preferably ≤25 ppb wt.-   [10] The process according to anyone of the preceding embodiments,    wherein the CVD process is carried out at a temperature in the range    of 1000 to <1200° C., preferably 1100 to 1150° C.-   [11] The process according to anyone of the preceding embodiments,    wherein the porous graphite substrate has an open porosity with a    porosity degree of 6% to 15%, preferably of ≥6% and <15%, preferably    of 6% to 13%, more preferably of 6 to <12%, more preferably of 9 to    11.5%.-   [12] The process according to anyone of the preceding embodiments,    wherein the porous graphite substrate comprises pores with a surface    pore diameter of 10 to 30 μm.-   [13] The process according to anyone of the preceding embodiments,    wherein the porous graphite substrate has an average pore size (pore    diameter) of 0.4-5.0 μm, preferably 1.0 to 4.0 μm and comprises    pores with a surface pore diameter of up to 30 μm, preferably up to    20 μm, preferably up to 10 μm.-   [14] The process according to anyone of the preceding embodiments,    wherein the porous graphite substrate has a density of 1.50 g/cm³,    preferably 1.70 g/cm³, preferably 1.75 g/cm³.-   [15] The process according to anyone of the preceding embodiments,    wherein the porous graphite substrate is an activated graphite    substrate having a modified surface porosity with enlarged surface    pores.-   [16] The process according to anyone of the preceding embodiments,    wherein the dimethyldichlorosilane precursor material is used for    depositing substantially stoichiometric silicon carbide with    substantially tetrahedral SiC crystals on the surface of the porous    graphite substrate and in the pores of the porous graphite substrate    to form tightly connected crystalline SiC material in the form of    tendrils extending from the porous graphite surface into the    graphite substrate and being tightly connected with the SiC surface    coating.-   [17] The process according to any of the preceding embodiments,    wherein the deposited SiC comprises at least 90%, preferably at    least 95%, more preferably at least 97% substantially stoichiometric    tetrahedral crystalline SiC.-   [18] The process according to anyone of the preceding embodiments,    wherein the amount of free Si in the SiC deposited on the graphite    substrate and/or in the pores of the graphite substrate comprises    not more than about 7 wt. %, preferably not more than about wt. 5%,    more preferably not more than about 3 wt. % free Si.-   [19] The process according to any of the preceding embodiments,    which is controlled to deposit substantially tetrahedral crystalline    SiC in the pores of the graphite substrate having an average    particle size of <10 μm, preferably of ≤7 μm, preferably of ≤5 μm,    preferably of ≤4 μm, preferably of ≤3 μm, preferably of ≤2 μm.-   [20] The process according to any of the preceding embodiments,    which is controlled to deposit substantially tetrahedral crystalline    SiC on the surface of the graphite substrate having an average    particle size of ≥10 μm, preferably of ≥10 to 30 μm.-   [21] The process according to any of the preceding embodiments,    which is controlled to deposit substantially tetrahedral crystalline    SiC in the pores of the graphite substrate in the form of tendrils    extending with a length of at least 50 μm, preferably at least 75 μm    length, preferably at least 100 μm length, preferably 75 to 200 μm    length into the graphite substrate.-   [22] The process according to any of the preceding embodiments,    wherein the process is controlled to deposit SiC with a density of    at least 2.50 g/cm³ in the pores and/or on the surface of the    graphite substrate.-   [23] A silicon carbide coated body obtainable by a process according    to any of the preceding embodiments.-   [24] The process according to anyone of embodiments [1] to [22],    comprising further steps for manufacturing articles for high    temperature applications, susceptors and reactors, semiconductor    materials, wafer.

DETAILED DESCRIPTION OF THE INVENTION I. Definitions

In the following description given ranges include the lower and upperthreshold values. Accordingly, a definition in the sense of “in therange of X and Y” or “in the range between X and Y” of a parameter Ameans, that A can be any value of X, Y and any value between X and Y.Definitions in the sense of “up to Y” or “at least X” of a parameter Ameans, that accordingly A may be any value less than Y and Y, or A maybe X and any value greater than X, respectively.

According to the present invention the term “about” in connection with anumeric value means to include a variance of ±10%, preferably ±8%,preferably ±5%, preferably ±3%, ±2%, ±1%.

According to the present invention the term “substantially” inconnection with a described feature means that this feature is realizedto a significant level and/or predominantly without being limited to acomplete and absolute realization thereof.

In the present invention the term “dimethyldichlorosilane”, having theformula (CH₃)₂SiCl₂, is usually abbreviated as DMS. DMS ((CH₃)₂SiCl₂)can also be designated as chlorodimethylsilane.

In the sense of the present invention the term “tendril” or “tendrils”describes deposited SiC material, having a specific length and extendingfrom the surface of a porous substrate into the pores, thereby providinga deep-reaching anchor- or hook-like solid connection between an outerSiC layer extending over the surface of a porous substrate with theporous substrate. Tendrils in the sense of the present invention exhibita root-like or network-like morphology and appear elongated and branchedand may look like tree roots with knotlike voids formed in the graphite.They are formed by growing of substantially tetrahedral SiC crystalswith low content of amorphous SiC to a tightly connected crystalline SiCmaterial extending with a length of at least 50 μm. This can e.g. bedetermined by SEM evaluation as illustrated in FIGS. 5a, 5b, 6a and 6b(tendril formation) and FIG. 10 or via XRD pattern according toconventional methods as illustrated in FIG. 11 (substantiallytetrahedral SiC crystal structure).

The term “crystallinity”, or “crystal(s)” referring tocrystallinity/crystals obtained in the process according to the presentinvention usually means “beta SiC” and/or “(substantially) tetrahedralcrystals” as described herein.

A tetrahedral crystal structure is also illustrated in FIG. 10 below.

In the sense of the present invention “porosity” usually relates to“open porosity”, otherwise the growing of the SiC tendrils into theporous graphite substrate would not be possible.

Scanning Electron Microscope (SEM) measurement, as mentioned in thepresent invention as a determination method e.g. for determination ofporosity degree, pore modification, SiC particle sizes, interfaciallayer thickness etc., preferably relates to a SEM system using PhenomProX (5 kV, 10 kV and 15 kV) at room temperature (appr. 24° C.).

II. Process

A first aspect of the invention relates to the process for manufacturinga silicon carbide (SiC) coated body by depositing SiC in a chemicalvapor deposition method using dimethyldichlorosilane (DMS) as the silanesource on a graphite substrate.

1. Process for Preparing the Graphite Substrate

One aspect of the process of the present invention relates to thepreparation of the graphite member used in said process as the graphitesubstrate.

The graphite substrate, that will form the basis or core of the SiCcoated element can be prepared from any suitable graphite element, e.g.by cutting into the desired size and shape.

Preferably a graphite is used having at least 99% purity.

The graphite may then be subjected to further treatments, such as inparticular a surface treatment for applying a specific surface structure(machining of the graphite). The surface structure can have variabledesign and may be applied according to the customers' needs and wishes.The surface structure can be applied using conventional methods known inthe art.

The thus pre-treated graphite member forms the so-called graphitepre-product.

According to the present invention it is particularly preferred to use agraphite substrate having an open porosity.

The graphite substrate preferably comprises small pores, preferably withan average pore size (pore diameter) in the range of 0.4-5.0 μm. Thegraphite substrate with the small pores preferably comprises pores witha surface pore diameter of <10 μm. This means, that substantially or thepredominant amount of pores exhibits a pore size or diameter of <10 μm.An exemplary embodiment of a suitable graphite pre-product isillustrated in FIG. 7a -c.

It is further preferred to use a graphite substrate having a porositydegree of >6% and 15%. Preferably, the graphite used in the process ofthe present invention has a porosity degree of about 6% to about 13%,preferably of about 11% to about 13%. Even more preferred is a graphitesubstrate having an open porosity with a porosity degree of 6% to 15%,preferably of ≥6% and <15%, preferably of 6% to 13%, more preferably of6 to <12%, more preferably of 9 to 11.5%.

It if further preferred to use a graphite substrate of fine grain type,super fine grain type and/or ultra fine grain type. Such graphite graintypes indicate graphite having particularly fine grain sizes.Preferably, the graphite substrate comprises an average grain size of<0.05 mm, more preferably the grain size is ≤0.04 mm, preferably ≤0.03mm, preferably ≤0.028 mm, preferably ≤0.025 mm, preferably ≤0.02 mm,preferably ≤0,018 mm, preferably ≤0.015 mm.

The graphite substrate preferably has a density of 1.50 g/cm³,preferably 1.70 g/cm³, preferably ≥1.75 g/cm³.

The grain size, pore size/pore diameter and the porosity degree can bedetermined using known methods, such as in particular by SEM (scanningelectron microscope) measurement as indicated above.

The porosity can also be obtained by calculating the product of theamount of pores per unit weight [cm³/g] of the graphite substrate andthe bulk density [g/cm³]. Accordingly, the porosity can be expressed ona volume basis as [vol/vol].

The (bulk) density can be obtained by dividing the mass of a graphitesample by the volume of said sample.

The amount of pores per unit weight can further be measured with amercury porosimeter under well-known conditions and using conventionalapparatus or as described e.g. in US2018/0002236 A1.

Said desired porosity degree and/or density can already be present inthe graphite used for preparing the graphite pre-product. The desiredcharacteristics can also be adjusted in the process steps of the presentinvention as described herein.

The above defined characteristics are advantageous with respect to themechanical strength of the graphite substrate and the SiC coatedgraphite body. With increasing porosity the density of the substratedecreases, which weakens the substrate material and may lead to cracksand defects or abrasion in high temperature applications or during thehigh temperature CVD process.

However, if the porosity degree and pore size is too small, it becomesdifficult to introduce the silane source deeply into the pores to formthe SiC tendrils therein. It is thus a further object of the presentinvention to find the proper balance between good mechanical andphysical strength and stability on the one hand and suitability forintroducing SiC deeply into the pores of the used graphite substratematerial and to identify proper process conditions which allowdeposition of SiC of high quality deeply inside the pores of a graphitesubstrate without deteriorating the mechanical properties of thesubstrate to provide improved SiC coated articles for high temperatureapplications.

2. Purification of the Graphite

A further process step relates to a further pre-treatment of thegraphite pre-product. Therein, the graphite pre-product is subjected toa purification and chlorination procedure. Therefore, the individualelements of the graphite pre-product are stacked into a furnace andpurged with nitrogen gas under heating to reach about 2000° C. Chlorinegas is purged into the furnace to carry out the chlorination of thegraphite pre-product. In principle methods for purifying carbonaceousmaterials such as graphite to remove metal element impurities bychlorination treatment are well known, e.g. from U.S. Pat. No.2,914,328, WO 94/27909, EP 1522523 A1, EP1375423 or U.S. Pat. No.4,892,788. In the known chlorination treatments argon is often used asthe purge gas with the particular aim to reduce the nitrogen content inthe graphite material. None of said documents describes the influence ofthe process conditions described therein on the porosity of the purifiedsubstrates.

However, the inventors of the present invention have found, that in oneparticular aspect of the present invention by applying very specificprocess conditions, not only purified graphite members can be prepared,but also graphite members having a modified surface porosity. Suchpurified graphite members with modified surface porosity turned out tobe particularly suitable for the use as graphite substrate in a CVDmethod according to the present invention, as such modified graphitemembers particularly facilitated the formation of the SiC tendrils inthe pores of the graphite substrate as described herein. In particularunder the aspect of keeping the balance between graphite with smallpores and low porosity degree for maintaining maximum mechanicalstrength of the substrate but at the same time having sufficientporosity to allow introduction of the silicon raw material deeply intothe pores for SiC deposition and tendril formation inside the graphitethe activated and modified surface porosity resulting from thepurification and activation step according to the present inventionturned out as surprisingly effective.

Therefore, one aspect of the present invention relates to a process formanufacturing a purified graphite member with a modified surfaceporosity. Such process comprises the specific process steps

-   -   a) providing a graphite member (e.g. the above mentioned        graphite pre-product) having an open porosity and comprising        pores with an average pore size (pore diameter) in the range of        0.4-5.0 μm and comprising pores with a surface pore diameter of        <10 μm, and having an average grain size of <0.05 mm;    -   b) purging the graphite member with nitrogen in a furnace until        the oxygen content in the furnace is about 5.0%;    -   c) heating the porous graphite member in the furnace to a        temperature of at least about 1000° C.;    -   d) continuing purging with nitrogen and heating of the porous        graphite member until the oxygen content is 0.5%;    -   e) directly subjecting the porous graphite member to a        chlorination treatment, by    -   f) increasing the temperature to >1500° C. and start purging        chlorine gas;    -   g) heating the porous graphite member in the chlorine atmosphere        to a temperature of 1700° C.

Surprisingly, it turned out that with such specific process conditionsit is possible to provide a purified graphite member, having a modifiedsurface porosity. Said surface porosity modification becomes apparentcompared to the surface porosity of the graphite member according tostep a), i.e. a graphite member prior to the treatment according tosteps b) to g). The modification can be determined e.g. inmicrophotographs or by SEM (scanning electron microscope) measurement asindicated above and as illustrated in FIGS. 7a, 7b and 7c showing theporosity of a graphite member according to step a), i.e. prior to thetreatment according to steps b) to g) and in FIGS. 8a, 8b and 8c clearlyshowing the modified surface porosity of said graphite member after thesteps b) to g). With the described process the surface porosity ismodified, e.g. by enlarging the surface pores to obtain a graphitesubstrate with modified porosity comprising pores with an average poresize (pore diameter) which is enlarged compared to the graphitesubstrate used in step a).

In particular, a graphite substrate with modified porosity comprisingpores with an average pore size (pore diameter) which is enlargedcompared to the graphite substrate used in step a) and comprising poreswith a surface pore diameter of ≥10 μm can be obtained.

Preferably, a graphite substrate with modified porosity comprising poreswith an average pore size (pore diameter) which is enlarged by thefactor 1.2 to 2.0, preferably by the factor 1.2, preferably 1.3,preferably 1.5, preferably 2.0, compared to the graphite substrate usedin step a) can be obtained.

Preferably, a graphite substrate with modified porosity comprising poreswith a surface pore diameter of ≥10 μm, preferably of ≥10 μm up to 30 μmcan be obtained.

Preferably, a graphite substrate with modified porosity comprising poreswith an enlarged surface pore diameter which is enlarged by the factor2.0, preferably by the factor 3.0, preferably by the factor 4.0,preferably by the factor 5.0, preferably by the factor 6.0, preferablyby the factor 7.0, preferably by the factor 8.0, preferably by thefactor 9.0, preferably by the factor 10.0, compared to the graphitesubstrate used in step a) can be obtained.

Preferably said modification leads to enlarging the surface porediameter of the graphite pores, which means that the entrance of thepores is extended and thus provides a kind of entry or funnels or cones,which supports leading the Si gas deeply inside the pores of the porousgraphite member. This has the advantage, that the entry for the Si gasis large whereas the overall porosity of the graphite remains small tomaintain the mechanical stability and strength of the material.

Accordingly, enlarged surface pore diameters according to the presentinvention can also mean enlarged at the surface of the substraterelative to the diameter of the pores inside the substrate.

The process steps b) to d) are thus controlled to achieve the abovedescribed surface porosity modifications.

In particular, such surface porosity modification comprises enlargingthe open pore diameter in the graphite surface compared to the open porediameter of the graphite member according to step a). With such specificprocess conditions the average open pore diameter in the graphitesurface can be increased for at least 25%, preferably for at least 30%,preferably for at least 35%, preferably for at least 40%, preferably forat least 45%, preferably for at least 50%, preferably for at least 55%,preferably for at least 60%. In particular the average open porediameter in the graphite surface can be increased for more than 60%,such as e.g. for 60 to 100%. Such surface porosity modification providesa modified surface structure, which promotes and supports the formationof SiC tendrils growing into and extending into the pores of thegraphite member, when used in a CVD method according to the presentinvention.

In step b) nitrogen is preferably purged until the oxygen content in thefurnace is about 3.0%, preferably about 2.5%. If the oxygen content instep b) is higher than defined herein before heating the porous graphitemember in step c) the graphite burns off and the pore structure is atleast partly destroyed. If the oxygen content in step b) is lower thandefined herein before heating the porous graphite member in step c),then no sufficient modification of the surface porosity can be achieved.

The oxygen content can be controlled using an oxygen/carbon monoxidemeter Bacharach Model 0024-7341.

Preferably, the temperature in step c) and d) is between >1000 and 1500°C., preferably between 1000 and 1200° C.

In step d) purging with nitrogen and heating is preferably continueduntil the oxygen content is reduced to ≤0.3%, preferably ≤0.2%,preferably ≤0.1%.

It is also possible to purge with nitrogen without starting to heat thegraphite member until the desired low oxygen content is reached and thenstart heating the porous graphite member as defined in step c) above.

The process steps b) to d) are carried out as long until the definedoxygen contents have been achieved.

Without being bound to theory it is assumed that the purge gas nitrogenand oxygen residues being present in the furnace react to form nitrogenoxides (NOx) during combustion, which are known for their reactivity,and which are thus assumed to further effect a purification of theporous graphite member.

In one aspect of the specific process described herein, the graphitemember having been purged and optionally heated until the desired lowoxygen content has been achieved is directly subjected to thechlorination process by starting to heat the graphite member as definedin step f).

In step f) and/or g) the chlorine gas is preferably purged with 5 to 20,preferably 7 to 10 slpm slpm (standard liter per minute) chlorine gas.The flow meter for controlling the flow of chlorine gas can be a flowmeter of Sierra Instruments Digital MFC.

Preferably, the chlorination treatment of steps e) to g) is carried outfor a time period of about 1 to 4 hours, preferably 1 to 3 hours.

In step g) the temperature is raised to ≥1700° C. It may also be raisedto ≥2000° C. Preferably, the chlorination treatment of steps e) to g) iscarried out at a temperature of not more than 2600° C., preferably thetemperature in step g) is raised to >1800 and ≤2600° C., preferably to1800 to 2500° C.

Preferably, the chlorination treatment is controlled to adjust achlorine content in the porous graphite member to an amount of at leastabout 20.00 ppb wt., preferably at least about 40.00 ppb wt., preferablyat least about 60.00 ppb wt.

In a further aspect, the chlorine content in the porous graphite memberis adjusted to an amount of at least about 30.00 ppb wt., preferably atleast about 40.00 ppb wt., preferably at least about 50.00 ppb wt.

In a further aspect, the chlorine content in the porous graphite memberis adjusted to an amount in the range of about 20.00 to 250.00 ppb wt.,preferably of about 30.00 to 250.00 ppb wt., preferably of about 40.00to 250.00 ppb wt., preferably of about 50.00 to 250.00 ppb wt.

In a further aspect, the chlorine content in the porous graphite memberis adjusted to an amount in the range of about 20.00 to 250.00 ppb wt.,preferably of about 20.00 to 200.00 ppb wt., preferably of about 20.00to 175.00 ppb wt., preferably of about 20.00 to 165.00 ppb wt.

Such chlorine content adjustment is particularly preferred in the abovedescribed process with the process steps e) to g).

Therein, the adjusted and above defined chlorine content is inparticular achieved in the deeper regions of the porous graphite memberand not only in the surface region. Very particularly, with thechlorination treatment according to the present invention the abovedefined preferred chlorine contents can be achieved inside the porousgraphite member, in particular in a depth of >50 μm below the mainsurface. The chlorination content in the depth of the graphite member ispreferred to achieve the desired degree of purity and to introducechlorine into the graphite member.

Said adjustment can in particular be achieved with the aforesaidpreferred chlorination treatment conditions.

Without being bound to theory it is assumed that introducing chlorineinto the graphite member provides a kind of reservoir of entrappedchlorine, which can achieve a further purification in following processsteps as described herein, e.g. in a CVD method as described herein. Tointroduce and preserve residual chlorine in the graphite member thespecific porosity degree and/or density of the graphite member asdefined herein is assumed as advantageous. It is assumed, that suchcomparably dense graphite materials support the entrapping of thechlorine in the graphite member.

According to the present invention the chlorination treatment is carriedout to provide a purified porous graphite member, e.g. a graphite memberresulting from the above described process step g), comprising one ormore of the following impurity elements in an amount of

-   -   calcium <100.00 ppb wt.,    -   magnesium <100.00 ppb wt.,    -   aluminum <100.00 ppb wt.,    -   titanium <20.00 ppb wt.,    -   chromium <200.00 ppb wt.,    -   manganese <20.00 ppb wt.,    -   copper <100.00 ppb wt.,    -   iron <20.00 ppb wt.,    -   cobalt <20.00 ppb wt.,    -   nickel <20.00 ppb wt.,    -   zinc <100.00 ppb wt.,    -   molybdenum <300.00 ppb wt.;        preferably comprising one or more of the following impurity        elements in an amount of    -   calcium <50.00 ppb wt.,    -   magnesium <50.00 ppb wt.,    -   aluminum <50.00 ppb wt.,    -   titanium <10.00 ppb wt.,    -   chromium <100.00 ppb wt.,    -   manganese <10.00 ppb wt.,    -   copper <50.00 ppb wt.,    -   iron <10.00 ppb wt.,    -   cobalt <10.00 ppb wt.,    -   nickel <10.00 ppb wt.,    -   zinc <50.00 ppb wt.,    -   molybdenum <150.00 ppb wt.

According to the present invention the chlorination treatment is carriedout to provide a porous member having a purity of ≥98%, preferably ≥99%.

The purification process according to the present invention preferablyprovides a porous graphite member having a total amount of impurities of≤10.00 ppm wt., preferably ≤5.00 ppm wt., preferably ≤4.00 ppm wt.

The above described process of purification or purification and surfacemodification may further comprise a step of annealing the porousgraphite member, thereby maintaining the porous graphite member at atemperature of >1000° C. for reducing stress in the porous graphitemember.

The resulting purified porous graphite member can be subjected to asurface cleaning, thereby removing dust and loose particles from thesurface of the treated graphite member.

In the known chlorination treatments of graphite it is quite usual touse argon as purge gas. The inventors of the present inventionsurprisingly found, that in particular for the preparation of purifiedgraphite members to be used in a CVD method as described herein, whereinthe formation of tendrils extending into the pores of the graphite isintended, argon is not suitable as purge gas. In contrast, the inventorsfound that no tendril formation occurs, if argon has been used as purgegas in the process of purifying the graphite members. In a furtheraspect of the invention it is thus preferred to carry out thepurification and chlorination process in the absence of argon.

3. Activation of the Chlorinated Graphite

A further process step relates to a further pre-treatment of a graphitepre-product or of the purified and chlorinated graphite member describedabove. Therein, the graphite pre-product or the purified, chlorinatedgraphite member described above is subjected to an activation procedure.The inventors of the present invention surprisingly found, that in onefurther aspect of the present invention the application of very specificprocess conditions are suitable to prepare an activated graphite memberwith (further) modified surface porosity. Such activated graphitemembers with modified surface porosity turned out to be particularlysuitable for the use as graphite substrates in a CVD method according tothe present invention, as such activated graphite members furtherfacilitate and support the formation of SiC tendrils extending into thepores of the graphite, when used in a CVD method as describedhereinafter.

Accordingly, a further aspect of the present invention relates to aprocess for manufacturing an activated graphite substrate with amodified surface porosity. Such process comprises the specific processsteps

-   -   i) positioning a graphite substrate having an open porosity and        comprising pores with an average pore size (pore diameter) in        the range of 0.4-5.0 μm and comprising pores with a surface pore        diameter of <10 μm, and having an average grain size of <0.05 mm        in a process chamber;    -   ii) purging the graphite substrate with nitrogen in the process        chamber until the oxygen content in the process chamber is about        5.0%;    -   iii) heating the porous graphite substrate in the furnace to a        temperature of at least about 1000° C.;    -   iv) continuing purging with nitrogen and heating of the porous        graphite substrate to a temperature of >1000° C. until the        oxygen content is ≤0.5%.

Such process can be carried out in a process chamber, cladded withgraphite. The process chamber may comprise holding elements, onto whichthe graphite elements to be treated can be mounted. It is preferred tokeep the point(s) of contact between the graphite elements and theholding elements as small as possible. The process chamber may beheated. In principle, such process chambers are known.

Said process may further comprise a step v) of annealing the activatedporous graphite substrate by maintaining the activated porous graphitesubstrate at a temperature of >1000° C. for reducing stress in theactivated porous graphite substrate following step iv).

The activated porous graphite substrate may be cleaned from surface dustor loose particles. However, it is particularly preferred, that theactivated porous graphite substrate obtained by said activation processis directly subjected to a chemical vapor deposition treatment, such asdescribed hereinafter. Accordingly, the aforesaid process preferablycomprises a further step vi), following step iv) or the optional stepv), of directly subjecting the activated porous graphite substrate to aCVD treatment. Therein, it is particularly preferred to omit anycleaning steps between the activation treatment and the CVD treatment,such as described e.g. in U.S. Pat. No. 3,925,577.

Accordingly, a further aspect of the present invention relates to aprocess for manufacturing an activated graphite substrate with amodified surface porosity, which comprises the specific process steps

-   -   i) positioning a graphite substrate having an open porosity and        comprising pores with an average pore size (pore diameter) in        the range of 0.4-5.0 μm and comprising pores with a surface pore        diameter of <10 μm, and having an average grain size of <0.05 mm        in a process chamber;    -   ii) purging the graphite substrate with nitrogen in the process        chamber until the oxygen content in the process chamber is about        5.0%;    -   iii) heating the porous graphite substrate in the furnace to a        temperature of at least about 1000° C.;    -   iv) continuing purging with nitrogen and heating of the porous        graphite substrate to a temperature of >1000° C. until the        oxygen content is ≤0.5%;    -   v) optionally annealing the activated porous graphite substrate        resulting from step iv) at a temperature of >1000° C. to reduce        stress in the activated porous substrate;    -   vi) directly subjecting the activated porous graphite substrate        of step iv) or v) to a CVD treatment without prior cleaning        step.

In one aspect of the invention, such activated porous graphite substratebeing directly subjected to a CVD process without removing dust or looseparticles may comprise a kind of powder layer on the surface, suchsurface powder layer then mainly comprises carbon powder or carbon dust.The porous graphite substrate resulting from step iv) or v) may comprisesuch a surface powder layer having a thickness of 1 to 15 μm, preferablyof 2 to 10 μm, preferably of 3 to 7 μm, preferably of >1 μm, preferablyof >2 μm. Accordingly, the activated porous graphite substrate beingdirectly subjected to CVD treatment in step vi) preferably exhibits arespective surface powder layer.

Such loose powder layer surprisingly turned out to positively influencethe SiC coating in the CVD process. Without being bound to theory, it isassumed that the loose powder layer provides an improved nucleationsurface to enhance growth of the crystalline SiC and further acceleratesthe SiC formation.

In step ii) of the activation process described above preferablynitrogen is purged until the oxygen content in the process chamber isabout 3.0%, preferably about 2.5%. In step iv) purging with nitrogen andheating is preferably continued until the oxygen content is reduced to≤0.3%, preferably ≤0.2%, preferably ≤0.1%.

The oxygen content can be controlled using an oxygen/carbon monoxidemeter Bacharach Model 0024-7341.

Similar as in the purification process described above, an oxygencontent in step ii) being higher than defined herein before heating theporous graphite member in step iii) is critical. With a higher oxygencontent the graphite may burn off and the pore structure is at leastpartly destroyed. If the oxygen content in step ii) is lower thandefined herein before heating the porous graphite member in step iii),then no sufficient activation of the graphite substrate can be achieved.

Preferably, the temperature in step iii) and iv) is between >1000 and1500° C., preferably between 1000 and 1200° C.

The process steps ii) to iv) are carried out as long until the definedoxygen contents have been achieved.

Very preferably a purified and chlorinated graphite member as describedabove is subjected to the present activation treatment. Therefore, it isparticularly preferred that in said activation process the graphitesubstrate of step i) exhibits a chlorine content of at least about 20.00ppb wt., preferably at least about 40.00 ppb wt., preferably at leastabout 60.00 ppb wt.

In a further aspect, the chlorine content in the porous graphitesubstrate used in step i) is at least about 30.00 ppb wt., preferably atleast about 40.00 ppb wt., preferably at least about 50.00 ppb wt.

In a further aspect, the chlorine content in the porous graphitesubstrate used in step i) is in the range of about 20.00 to 250.00 ppbwt., preferably of about 30.00 to 250.00 ppb wt., preferably of about40.00 to 250.00 ppb wt., preferably of about 50.00 to 250.00 ppb wt.

In a further aspect, the chlorine content in the porous graphitesubstrate used in step i) is in the range of about 20.00 to 250.00 ppbwt., preferably of about 20.00 to 200.00 ppb wt., preferably of about20.00 to 175.00 ppb wt., preferably of about 20.00 to 165.00 ppb wt.

Very particularly, said preferred chlorine contents are present insidethe porous graphite substrate, in particular in a depth of >50 μm belowthe main surface.

As mentioned above, using graphite substrate with such chlorine contentsentrapped inside the graphite substrate are advantageous to achieve afurther purification during the present activation treatment.

For the reasons set out above, the porous graphite substrate of step i)of the activation process preferably has a pore characteristic asdefined above, such as in particular the above defined small averagepore size (diameter) and the low porosity degree.

For the reasons set out above, the porous graphite substrate of step i)of the activation process preferably has a porosity degree as definedabove.

For the reasons set out above, the porous graphite substrate of step i)of the activation process preferably has a grain size and/or density asdefined above.

The porous graphite substrate being treated in the activation treatmentdescried herein can be further purified to the entrapped chlorinecontent, as explained above. Accordingly, the activated porous graphitesubstrate resulting from the above described process may comprise one ormore of the following impurity elements in an amount of

-   -   calcium <100.00 ppb wt.,    -   magnesium <100.00 ppb wt.,    -   aluminum <100.00 ppb wt.,    -   titanium <20.00 ppb wt.,    -   chromium <200.00 ppb wt.,    -   manganese <20.00 ppb wt.,    -   copper <100.00 ppb wt.,    -   iron <20.00 ppb wt.,    -   cobalt <20.00 ppb wt.,    -   nickel <20.00 ppb wt.,    -   zinc <100.00 ppb wt.,    -   molybdenum <300.00 ppb wt.        preferably comprising one or more of the following impurity        elements in an amount of    -   calcium <50.00 ppb wt.,    -   magnesium <50.00 ppb wt.,    -   aluminum <50.00 ppb wt.,    -   titanium <10.00 ppb wt.,    -   chromium <100.00 ppb wt.,    -   manganese <10.00 ppb wt.,    -   copper <50.00 ppb wt.,    -   iron <10.00 ppb wt.,    -   cobalt <10.00 ppb wt.,    -   nickel <10.00 ppb wt.,    -   zinc <50.00 ppb wt.,    -   molybdenum <150.00 ppb wt.

The activated porous graphite substrate may have a purity of 98%,preferably 99%.

The activated porous graphite substrate may further have a total amountof impurities of 10.00 ppm wt., preferably 5.00 ppm wt., preferably 4.00ppm wt.

If the activated porous graphite substrate is directly subjected to achemical vapor deposition treatment, such CVD treatment can be carriedout in the same process chamber. Then, the introduction of H₂ canalready be started, if the temperature in the process chamber is >1000°C. and the oxygen content in the process chamber is below 1.5%. Forexample, the process step 2) of the CVD method described below canalready start, if such oxygen content of below 1.5% is reached in theprocess chamber.

With said activation process the above described surface poremodifications with the enlarged surface pore diameters as defined abovecan be achieved.

It turned out that accordingly treated graphite substrates areparticularly suitable to support SiC tendril formation in a CVD methodusing DMS as described herein and to provide an improved substrate forthe CVD method as described herein.

4. Silicon Carbide (SiC) Deposition on Porous Graphite Substrates byChemical Vapor Deposition (CVD)

A further process step relates to the deposition of SiC on porousgraphite substrates. Preferred porous graphite substrates are purifiedand chlorinated graphite members resulting from the purification processdescribed above, as well as activated graphite substrates resulting fromthe activation process described above, which exhibit the modifiedenlarged surface porosity.

A key element of the process of the present invention is the formationof the interfacial layer with the SiC filling of the pores of the porousgraphite substrate and the subsequent deposition of SiC to form an outersilicon carbide layer on the porous graphite substrate, which isachieved by chemical vapor deposition of dimethyldichlorosilane. Inprinciple, the chemical vapor deposition (“CVD”, also known as chemicalvapor phase deposition “CVPD”) is a well-known technique used to producehigh quality, high-performance, solid materials, such as in particularto produce thin films in the semiconductor industry. Typically, asubstrate is exposed to one or more volatile precursors, which reactand/or decompose on the substrate surface to produce the desireddeposit. CVD is commonly used to deposit silicon, silicon dioxide,silicon nitride as well as silicon carbides. Therein, a wide variety oforganosilanes can be used as the volatile CVD precursor, includingsimple organosilanes, which may be substituted by one or more halogenatoms, such as mono-, di-, tri- and tetramethyl silane andchlorosilanes, including e.g. methyldichlorosilane,methyltrichlorosilane, tetrachlorosilane (SiCl₄),dimethyldichlorosilane, as well as arylsilanes, which may be substitutedby halogen atoms. The most common CVD precursor for depositing siliconcarbide are trichlorosilane, tetrachlorosilane andmethyltrichlorosilane.

As described e.g. by D. Cagliostro and S. Riccitiello (1990) and byByung Jin Choi (1997), both cited above, the characteristics and thequality of the deposited SiC material as well as its behavior in the CVDprocess strongly depends from the kind of selected organosilaneprecursor material and from the specific CVD process conditions applied.As described e.g. by D. Cagliostro and S. Riccitiello (1990) thevolatility, transport properties and reaction kinetics of the fractionsformed from the precursor material affect the ability to penetrate,condense in and/or coat porous media and therefore affect morphology,densification and/or mechanical properties. As further described inUS2018/002236 cited above also the proper selection of the poroussubstrate material is critical to achieve Si infiltration into thepores. Too small porosity impairs the introduction of the Si rawmaterial into the deeper regions of the porous substrate whereas too bigpores deteriorate the mechanical strength of the substrate. Byung JinChoi (1997) further illustrates the influence on the characteristics andquality of the deposited SiC material by varying the specific processconditions (e.g. CVD temperature) and by using different organosilaneCVD precursor materials.

The inventors of the present invention have surprisingly found that theadvantageous product characteristics as described herein can be achievedwith the new process of the present invention by usingdimethyldichlorosilane (DMS), as the CVD precursor. It turned out thatwith the specific selection of dimethyldichlorosilane (DMS) as the CVDprecursor instead of e.g. the more common tetrachlorosilane,trichlorosilane or methyltrichlorosilane (MTS, trichloromethylsilane) inthe new process of the present invention it is possible to achieve theimproved characteristics of the SiC material deposited on porousgraphite to form the improved SiC coated articles as described herein.The new and improved SiC coated articles are e.g. characterized by thehereinafter described improved SiC material with the specific SiC grainand crystal size and substantially tetrahedral crystallinity withreduced contents of amorphous SiC, which improves the strength andhardness of the deposited SiC, the specific SiC tendril formation andthe pore filling degree as described herein, with the formation of theinterfacial layer with the described thickness and the improved outerSiC coating layer, which is tightly connected with the SiC tendrils,thus providing improved mechanical properties, homogeneity andcontinuity etc.

Accordingly, one further aspect of the present invention relates to aCVD process with very specific CVD process conditions, being suitable toprovide a new and improved SiC coating and thus new and improved SiCcoated bodies.

Concretely, the inventors of the present invention found, that only thespecific CVD conditions of using dimethyldichlorosilane (DMS) as thesilane source or CVD precursor in the presence of H₂ as the purge gasfor depositing SiC on a graphite substrate having an open porosity leadsto the formation of SiC tendrils, which grow into the porous structureof the porous graphite substrate, thus extending into the graphitesubstrate. Such SiC tendrils are characterized by substantiallytetrahedral SiC crystals (as shown e.g. in FIG. 10) forming a tightlyconnected crystalline SiC material in the form of root-like tendrilsextending with a length of at least 50 μm into the porous graphitesubstrate. As mentioned above, the improved SiC material deposited underthe specific conditions of the CVD process of the present invention arecharacterized by being predominantly formed as crystalline beta SiC (seee.g. FIG. 11) forming tetrahedral crystals (see e.g. FIG. 10) andcomprising low amounts of amorphous SiC, which is illustrated by the XRDpattern of FIG. 11 with the very sharp beta SiC peak (111). The SiCtendrils are further tightly connected with an overlying SiC surfacecoating as shown e.g. in FIG. 6b (reference sign (7)). This effectsimproved connectivity of the SiC surface layer with the graphitesubstrate and reduced exfoliation, peeling or warpage.

This allows to deposit a SiC coating on the porous graphite substratewith enhanced mechanical properties, such as improved mechanicalproperties, such as a tight connection (adhesion) of the SiC coatinglayer to the underlying substrate, high etch resistance, impactresistance, fracture toughness and/or crack resistance of the SiCcoating as well as oxidation resistance of the coated body, as well asimproved homogeneity of the SiC coating.

Accordingly, a further aspect of the present invention relates to aprocess for manufacturing a silicon carbide (SiC) coated body (orarticle), such process comprising the steps

-   -   1) positioning a porous graphite substrate having an open        porosity with a porosity degree of 6% to 15% and comprising        pores with a surface pore diameter of 10 to 30 μm in a process        chamber;    -   2) heating the porous graphite substrate in the process chamber        to a temperature in the range of 1000 to 1200° C. under        atmospheric pressure in the presence of H₂ as purge gas;    -   3) introducing a mixture of dimethyldichlorosilane (DMS) and H₂        into the process chamber for at least 30 minutes;    -   4) depositing in an infusion phase crystalline SiC grains in the        open pores of the graphite substrate by chemical vapor        deposition (CVD) and allow growing of crystalline SiC grains to        substantially tetrahedral SiC crystals until a connected        crystalline SiC material in the form of tendrils extending with        a length of at least 50 μm into the porous graphite substrate is        formed;    -   5) optionally continuing the chemical vapor deposition until a        SiC surface layer of up to 50 μm thickness, which comprises        substantially tetrahedral SiC crystals, is deposited on the        surface of the graphite substrate in a first growth phase;    -   6) cooling the body resulting from step 5).

Preferably, in step 2) the temperature is 1000 to <1200° C., morepreferably 1100 to 1150° C. As can be seen in FIG. 9 the selection ofthe proper temperature range in the CVD process influences the SiCcrystallization by influencing the rate of crystal growth and the rateof homogeneous nucleation. In the optimum temperature range (shaded areain FIG. 9) the balance between crystal growth and homogeneous nucleationis properly balanced and the substantially tetrahedral crystalline SiCwith the herein defined crystal size and the formation of the tendrilscan be achieved. FIG. 9 further shows that too high temperatures lead tomelting and the formation of metastable material (amorphous SiC). Theproper temperature range with the well balanced rate of crystal growthand homogeneous nucleation has to be determined individually dependingfrom the further process conditions such as in particular from theselection of the organosilane source used as the CVD precursor.

Also the pressure conditions influence said balance of rate of crystalgrowth and homogeneous nucleation. Low pressure supports low depositionrates and favors for less and large nuclei. The inventors of the presentinvention found atmospheric pressure to be suitable to achieve theeffects described herein.

The inventors further found, that the formation of tendrils depends fromthe CVD deposition time. Accordingly, in step 3) the mixture ofdimethyldichlorosilane (DMS) and H₂ is introduced into the processchamber for >30 minutes. Preferably, the mixture ofdimethyldichlorosilane (DMS) and H₂ is introduced for a period of >30minutes and <12 hours, preferably >45 minutes and <10 hours, morepreferably for at least one hour, more preferably for <10 hours,preferably <8 hours, preferably <6 hours, preferably <4 hours,preferably <3 hours, most preferred within 1 to 2 hours. Within shortertimes it is hardly possible to achieve the formation of tendrilsaccording to the present invention. Larger times become disadvantageousunder process economic considerations.

It is further preferred, that in the process of the present inventionthe chemical vapor deposition (CVD) is carried out with a total flowrate of the mixture of DMS and H₂ of 25 to 200 slpm, preferably 40 to180 slpm, more preferably 60 to 160 slpm.

It is particularly preferred to deposit not only SiC tendrils in thepores of the graphite, but also a SiC coating on top of the surface ofthe graphite substrate with the SiC filled pores. Therefore, step5)—although not mandatory—is preferably also carried out. Certainly,step 5) can be controlled to achieve a SiC surface layer of the desiredthickness, e.g. by varying the deposition time and/or the amount of DMS.

It further turned out, that surprisingly the formation of the SiCtendrils can significantly be improved or facilitated, if prior to step2) a pre-conditioning step is included, wherein the porous graphitesubstrate is pre-treated and activated by purging the process chamberwith N₂ and heating to a temperature >1000° C., preferably of 1000 to1500° C., and then directly carrying out step 2). In principle suchpre-treatment step is very similar to the graphite activation processdescribed above. As mentioned above, the activation process and the CVDmethod are preferably combined and carried out in the same processchamber. Accordingly, such pre-conditioning step preferably comprisespurging the process chamber with nitrogen until the oxygen content inthe process chamber is about 5.0%, followed by heating the processchamber to a temperature of at least about 1000° C., preferably of >1000to 1500° C., preferably of between 1000 and 1200° C., until the oxygencontent is ≤0.5%, preferably ≤0.3%, preferably ≤0.2%, preferably ≤0.1%.

The oxygen content can be controlled using an oxygen/carbon monoxidemeter Bacharach Model 0024-7341.

As mentioned above, it further surprisingly turned out that the specificporosity with a particular pore size/pore diameter and degree ofporosity of the graphite substrate to be coated with SiC by CVD plays animportant role to achieve the coated articles with the desired superiormechanical properties, such as a tight connection (adhesion) of the SiCcoating layer to the underlying substrate, high etch resistance, impactresistance, fracture toughness and/or crack resistance of the SiCcoating as well as oxidation resistance of the coated body. Therefore,the graphite substrate to be coated with SiC should exhibit an openporosity with a small porosity degree of 6% to 15% and should furthercomprise a sufficient amount of pores having an enlarged surface porediameter of about 10 to 30 μm to facilitate SiC infiltration.

A graphite substrate to be coated with SiC in the process of the presentinvention exhibiting a porosity of ≥6% and ≤15% turned out to beparticularly suitable to achieve the SiC coated articles with thedesired properties.

Preferably the graphite substrate to be coated with SiC in the processof the present invention exhibits a porosity of >6% to <15% or aporosity in a range of about 6% to about 14%, about 6% to about 13%,about 6% to <13%, or a porosity in a range of >6% to about 15%, about 7%to about 15%, about 8% to 15%, about 9% to about 15%, about 10% to about15%, about 11% to about 15%, or a porosity in a range of ≥11% to about13%. Most preferred is a porosity degree of ≥6% and <15%, preferably 6%to 13%, more preferably 6 to <12%, more preferably 9 to 11.5%. Suchpreferred ranges are likewise preferred ranges in the purification andchlorination process and the activation process, both as describedabove, and likewise in the resulting products as described below.

For the reasons described above it is further preferred, that the porousgraphite substrate has small pores, such as an average pore size (porediameter) of 0.4-5.0 μm, preferably 1.0 to 4.0 μm and to comprise poreswith an enlarged surface pore diameter of about 10 μm up to 30 μm,preferably up to 20 μm, preferably up to 10 μm.

For the reasons described above it is further preferred, that the porousgraphite substrate has a density of 1.50 g/cm³, preferably ≥1.70 g/cm³,preferably ≥1.75 g/cm³.

For the reasons described above it is further preferred, that the porousgraphite substrate used in step 1) is an activated graphite substratehaving a modified surface porosity with enlarged surface pores asdescribed in detail above.

As mentioned above, the degree of porosity, the pore size/diameter orthe enlarged surface porosity and the density according to the presentinvention can be determined as indicated above, e.g. by known methods,including in particular determination of the porosity via SEMmeasurement.

The term “tendril” or “tendrils” as used in the present inventiondescribes deposited SiC material, which is grown to extend from thesurface of the porous substrate into the pores and thus extends from thesurface of the porous substrate into the deeper regions thereof, e.g. intendril-like, root-like or stretched dimension as described alreadyabove, thus providing a deep-reaching anchor- or hook-like solidconnection of the outer SiC layer extending over the surface of theporous substrate with the porous substrate. To achieve sufficientanchoring the tendrils are allowed to grow into the pores until anaverage length of at least 50 μm is achieved.

Preferably step 4) is carried out until a connected crystalline SiCmaterial in the form of tendrils extending with an average length of atleast 75 μm, preferably at least 100 μm, preferably 75 to 200 μm isformed.

The formation of tendrils, extending into the pores of the graphitesubstrate, in the process of the present invention the infusion phase ofstep 4) leads to the formation of a so-called “interfacial layer”. Theterm “interfacial layer” as used in the present invention describes thezone or region, which is located between the porous graphite substrateand the SiC coating layer deposited on the surface of said porousgraphite substrate, e.g. in step 5) and/or in step 8) as describedbelow, and which is formed by the porous graphite, wherein the pores arefilled with the deposited SiC, i.e. the SiC tendrils, as describedherein. Accordingly, the interfacial layer of the SiC coated articles orbodies of the present invention comprises the porous graphite materialof the porous graphite substrate with SiC tendrils extending into thepores.

Preferably, step 4) is carried out until an interfacial layer having athickness of at least 100 μm is formed.

Said interfacial layer extends from the surface of the porous graphitesubstrate more or less vertically downwards into the porous graphitesubstrate and thus forms the interfacial layer or region. Saidinterfacial layer preferably has a thickness of >100 μm, more preferablyof at least 200 μm, more preferably of about 200 to about 500 μm.

In step 3) of the present invention the heated porous graphite substrateis subjected to chemical vapor deposition for depositing the siliconcarbide in and on the porous graphite substrate. Therein, the mixture ofDMS and H₂ according to step 3) is preferably obtained by introducingthe H₂ gas into the DMS tank, bubbling the H₂ through the DMS in thetank and passing the mixture of DMS and H₂ into the process chamber bypushing the mixture from the top of the tank.

Preferably, the chemical vapor deposition (CVD) is carried out with atotal flow rate of the mixture of DMS and H₂ of 25 to 200 slpm,preferably 40 to 180 slpm, more preferably 60 to 160 slpm. Morepreferably, an amount of 25-45 slpm of the mixture is introduced intothe process chamber.

Preferably, H₂ is directed through the DMS tank and joined with the DMS.A further amount of H₂ may be purged directly into the process chamber,where it joins with the mixture of DMS and H₂.

The flow meter for controlling the flow of the DMS/H₂ mixture can be aflow meter of Sierra Instruments Digital MFC.

Further steps of heating and purging with H₂ may be carried out prior tothe introduction of the DMS.

As mentioned above, argon is a common purge gas also in CVD methods,however, the inventors found, that no tendril formation occurs whenusing argon as purge gas in the CVD process of the present invention (orany other process described herein). Therefore, the process ispreferably carried out in the absence of argon.

In the preferred further step e) of the CVD process of the presentinvention a SiC layer is further grown on the porous graphite substratein a first growth phase by continuing chemical vapor deposition of themixture of dimethyldichlorosilane and H₂, thus covering the graphitesubstrate surface. As mentioned above, the thickness of such SiC coatingcan be varied, although a surface layer of up to 50 μm is preferred.

Preferably, the process step 5) is carried out until a SiC surface layerof at least 30 μm, preferably at least 35 μm, preferably at least 40 μm,more preferably at least 45 μm thickness is deposited on the surface ofthe graphite substrate.

The thus coated SiC graphite substrate may be subjected to a furtherstep of annealing the coated porous graphite substrate by maintainingthe coated porous graphite substrate at a temperature of >1000° C. forreducing stress in the SiC coating and in the porous graphite substrate.

Such an annealing step may also be carried out following thepre-conditioning step described above.

Accordingly, such an annealing step can be carried out

-   -   prior to step 2) and/or, if present, following the        pre-conditioning step as described above,    -   and/or prior to step 6).

Due to the positioning of the graphite substrate elements on holdingelements said points of contact are not coated with SiC in the CVDprocess. Therefore, to achieve a homogenous and continuous SiC coatingover the whole surface, the following process steps 7) and 8) may becarried out following step 6):

-   -   7) changing the position of the body resulting from step 6); and    -   8) repeating step 2) and introduction of a mixture of        dimethyldichlorosilane (DMS) and H₂ into the process chamber in        a second growth phase, thereby depositing crystalline SiC grains        on the surface of the porous graphite substrate resulting from        step 6) by chemical vapor deposition (CVD) and allow growing of        the crystalline SiC grains to substantially tetrahedral SiC        crystals until an outer SiC surface layer is formed.

Preferably, the second growth phase according to step 8) is carried outapplying the same CVD conditions as in the infusion phase and firstgrowth phase. Therefore, in principle the same applies as defined abovefor the first growth phase.

An annealing step as described above can also be carried out prior tostep 8) and/or prior to the cooling step 6). A similar cooling step iscarried out after the second growth phase of step 8). Following thecooling steps, the coated bodies are preferably subjected to a qualityinspection and optionally a purification, thereby removing looseparticles and/or protruding crystals.

However, preferably, the CVD process according to the present inventionis controlled, so that the SiC layer deposited onto the graphitesubstrate in the first growth phase in step 5) is thicker than the SiClayer deposited onto the graphite substrate in the second growth phasein step 8) under the same conditions, in particular with the same DMSamount, and in the same deposition time. This can e.g. be achieved bycarrying out the above described pre-conditioning step prior to step 2).This must be considered as surprising, as it would be assumed thatapplying the same amount of DMS in the same time to the porous graphiteof step 1) would lead to a thinner SiC coating in the first growthphase, as before building up the SiC coating DMS is needed for formingthe SiC tendrils, which takes some time prior to building up the coatinglayer. Without being bound to theory it is assumed that thepre-conditioning step provides an activated surface of the graphitesubstrate, which provides crystallization points for the SiC crystalsand thus accelerates and facilitates the SiC formation in the pores andon the graphite surface. Such pre-conditioning step may comprise theprocess steps i) to v) as described above. It is assumed, that thesurface powder layer formed on the graphite substrate in the processsteps i) to v) as described above may act as activated surface of thegraphite substrate subjected to the CVD treatment in step 1) above. Thepowder on the graphite surface may provide said crystallization pointsfor the SiC crystals and accelerate and facilitate the SiC formation.

In the so-called “infusion phase” very small SiC grains form in the openpores of the porous graphite substrate, which are allowed to grow to SiCcrystals of beta-SiC with substantially tetrahedral crystallinity toform the so-called “tendrils” within the pores.

After filling the pores, small SiC grains are deposited on the uppersurface of the graphite substrate to start buildup of the outer SiClayer in the so-called “growth phase”. The small SiC grains are allowedto grow to SiC crystals to form the out SiC layer.

According to the present invention the term “SiC grain” or “SiC grains”refers to very small crystalline particles formed and deposited in thechemical vapor deposition in step 4) and 5) and 8) by usingdimethyldichlorosilane and which mainly comprise silicon carbide. SuchSiC grains according to the present invention are crystalline andexhibit an average particle size of <2 μm.

In contrast to the above defined SiC grains, according to the presentinvention the term “SiC crystal” or “SiC crystals” refers to biggercrystalline SiC particles and which are formed in step 4) and 5) and 8)by allowing the deposited SiC grains to grow. Such SiC crystalsaccording to the present invention similarly mainly comprise siliconcarbide and exhibit an average particle size of 2 μm. Preferably the SiCcrystals according to the present invention exhibit an average particlesize >2 μm. It is further preferred that the SiC crystals according tothe present invention exhibit an average particle size of not more than30 μm. More preferably the SiC crystals according to the presentinvention exhibit an average particle size in the range of about 2 to≤30 μm.

The average particle size according to the present invention can bedetermined by known methods, such as SEM as indicated above.

Accordingly, in a further aspect of the process of the present inventionthe infusion phase of step 4) is controlled to effect the formation of(crystalline) SiC grains having an average particle size of <10 μm canbe observed, such as in particular of ≤7 μm, more particularly of 5 μmor even 4 μm or 3 μm or even ≤2 μm, formed in the pores during theinfusion phase. Further, the infusion phase of step 3) is controlled toeffect the formation of SiC crystals having an average particle size ofnot more than 30 μm (≥2 to ≤30 μm), preferably of not more than 20 μm(≥2 to ≤20 μm), preferably of not more than 10 μm (≥2 to ≤10 μm) formedin the pores during the infusion phase by allowing the SiC grains togrow.

In a further aspect of the process of the present invention the firstand second growth phase of step 5) and 8) are controlled to effect theformation of (crystalline) SiC grains having an average particle size of<10 μm can be observed, such as in particular of ≤7 μm, moreparticularly of ≤5 μm or even ≤4 μm or ≤3 μm or even ≤2 μm on thesurface of the graphite substrate during the growth phase and allowingthe SiC grains to grow to form SiC crystals having an average particlesize of not more than 30 μm, preferably having an average particle sizeof 2 to ≤30 μm, preferably of not more than 20 μm (≥2 to ≤20 μm),preferably of not more than 10 μm (≥2 to ≤10 μm) on the graphitesubstrate during the growth phase to form the outer SiC layer.

A certain amount of SiC grains may also already be formed on thegraphite surface during the infusion phase.

Preferably, the substantially tetrahedral SiC crystals in the poresexhibit an average particle size of <10 μm, preferably of ≤7 μm,preferably of ≤5 μm, preferably of ≤4 μm, preferably of ≤3 μm,preferably of ≤2 μm.

Preferably, the substantially tetrahedral SiC crystals formed as thesurface coating layer in the growth phase exhibit a larger particlesize, preferably an average particle size of 10 μm, preferably of ≥10 to30 μm. This is probably due to the limitation of the crystal growthinside the pores by the space given by the small pore size.

Further, it surprisingly turned out the with the selected processconditions of the present invention the deposited SiC is substantiallystoichiometric SiC having a ratio of Si:C of 1:1.

Further, the process according to the present invention is preferablycontrolled to deposit SiC with a density according to or very close tothe theoretical density of SiC, which is 3.21 g/cm³, in the pores and/oron the surface of the graphite substrate. Preferably, the deposited SiChas a density of at least 2.50 g/cm³, preferably the deposited SiC has adensity in the range of 2.50 to 3.21 g/cm³, more preferably in the rangeof 3.00 to 3.21 g/cm³.

In the process according to the present invention the CVD deposition ispreferably carried out until the density of tendrils (amount of tendrilsper area) formed in the interfacial layer is ≥6% and ≤15%, preferably 6%to 13%, more preferably 6 to ≤12%, more preferably 9 to 11.5%.

According to a further aspect of the present invention it turned outthat a comparably high degree of pore filling with the deposited SiCmaterial may be advantageous to achieve the desired superior mechanicalproperties as described above. Accordingly in a preferred embodiment inthe process of the present invention the infusion phase of step 4) iscarried out until at least about 70% of the walls of the open pores ofthe graphite substrate are coated with the deposited SiC material. Forsake of clarity it should be noted that this shall not define that 70%of the open porous substrate or 70% of the total amount of the pores ofthe porous substrate shall be filled with the SiC, neither are 70% ofthe volume of the pores filled with SiC. The pore filling degree inaccordance with the present invention relates to the degree of coatingof the inner walls of the open pores, of which preferably at least 70%are coated with a deposited SiC coating.

More preferably, the infusion phase of step 4) is carried out until atleast about 75%, 80%, 85%, 90% of the inner walls of the open pores arecoated with the deposited SiC material.

In a further aspect, with the CVD method according to the presentinvention SiC can be deposited on a porous graphite substrate and in theopen pores thereof, having a pore filling degree according to the abovedefinition (i.e. a degree of SiC coating of the inner walls of thepores) of ≥80% until a depth of about 10 μm from below the main surfaceof the coated graphite.

With the CVD method according to the present invention SiC can bedeposited on a porous graphite substrate and in the open pores thereof,having a pore filling degree according to the above definition (i.e. adegree of SiC coating of the inner walls of the pores) of still ≥60% ina depth of between about 50 to about 10 μm from below the main surfaceof the coated graphite.

With the CVD method according to the present invention SiC can bedeposited on a porous graphite substrate and in the open pores thereof,having a pore filling degree according to the above definition (i.e. adegree of SiC coating of the inner walls of the pores) of about 50% in adepth of between about 100 to about 50 μm from below the main surface ofthe coated graphite.

With the CVD method according to the present invention SiC can bedeposited on a porous graphite substrate and in the open pores thereof,having a pore filling degree according to the above definition (i.e. adegree of SiC coating of the inner walls of the pores) of about 40% in adepth of between about 200 to about 100 μm from below the main surfaceof the coated graphite.

In a depth of ≥100 μm the pore filling degree according to the abovedefinition is up to 50%.

In a depth of ≥200 μm the pore filling degree according to the abovedefinition is up to 40%.

The degree of pore filling according to the present invention can bedetermined by SEM measurement as indicated above.

As mentioned above, a further aspect of the process of the presentinvention relates to the formation of so called tendrils, which act likean anchor for the SiC coating in the porous substrate.

The process of the present invention is in particular controlled todeposit in step 5) and 8) a SiC coating layer in the form of ahomogeneous and continuous, essentially impervious layer onto thesurface of the graphite substrate. This means, that the SiC coatinglayer is in particular deposited to be essentially free of cracks,holes, spallings or other noticeable surface defects and exhibitsessentially a continuous thickness over the whole coated surface area(despite the lacks of coating in the first growth phase due to theholding members).

In the process according to the present invention the SiC materialdeposited in the pores in step 4) and/or on the surface in steps 5)and/or 8) comprises at least 90 wt. % pure silicon carbide (SiC).Preferably the SiC material deposited in the steps 4), 5) and/or 8)comprises at least 91 wt. % at least 92 wt. %, at least 93 wt. %, atleast 94 wt. %, at least 95 wt. %, or at least 96 wt. % silicon carbide(SiC). More preferably, the SiC material deposited in the steps 4), 5)and/or 8) comprises at least 97 wt. % SiC, in each case relative to thetotal weight of the deposited SiC material.

The SiC material deposited in the steps 4), 5) and/or 8) of the processof the present invention further comprises not more than about 10 wt. %,not more than about 9 wt. %, not more than about 8 wt. %, not more thanabout 7 wt. %, not more than about 6 wt. %, not more than about 5 wt. %,or not more than about 4 wt. % free Si. More preferably, the SiCmaterial deposited in the steps 4), 5) and/or 8) comprises not more thanabout 3 wt. % free Si, in each case relative to the total weight of thedeposited SiC material.

In the process according to the present invention the SiC materialdeposited in the steps 4), 5) and/or 8) preferably comprises a highpurity.

Surprisingly, under the present process conditions only few amounts ofamorphous SiC are formed.

The aforementioned amounts of (pure) SiC and free Si relate to the SiCmaterial deposited in the pores of the graphite substrate, forming thetendrils and the interfacial layer, and/or depositing on the surface ofthe graphite substrate in the first and second growth phase, togetherforming the outer SiC layer. Accordingly, when referring to SiC in themeaning of e.g. “SiC layer”, “SiC coating”, “SiC coated body (article)”,“SiC (pore) filling”, “SiC grain(s)” or “SiC crystal(s)” etc. as usedherein in any context with the CVD deposited SiC material in the step4), 5) and/or 8), not necessarily pure SiC is meant but an SiC material,which may comprise the above cited components in the defined amounts,e.g. in particular free SiC and further impurities besides pure SiC maybe present therein.

In principle, the process of the present invention can be applied to anysuitable graphite substrate. Preferably the graphite substratesdescribed herein are used.

The process of the present invention further comprises a step 6) ofcooling the SiC coated body (or article).

In a further aspect of the present invention the inventors surprisinglyfound, that the purity of the DMS used as the CVD precursor mayinfluence the formation, crystallinity (quality) and the length of SiCtendrils as described herein. In particular, the inventors surprisinglyfound that the content of siloxane impurities in the DMS used as the CVDprecursor has a remarkable impact on the desired SiC quality, crystalformation and thus the tendril formation. It has also been found, thatthe content of certain metal impurities, such as metal elements selectedfrom the group consisting of Na, Mg, Al, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu,Zn, Mo and W, influences the desired SiC tendril formation. Veryparticularly, the presence of a certain content of metal elementimpurities selected from Mn, Cu and/or Zn has been found to have asignificant impact on the desired SiC tendril formation. Moreparticularly, the presence of a certain content of siloxane impuritiestogether with a certain content of one or more of the metal elementimpurities selected from Mn, Cu and/or Zn was found to influence thedesired SiC tendril formation significantly.

Without being bound to theory it is assumed that the presence of certainamounts of such siloxane impurities, as defined below, has a positiveeffect with respect to the porosity of the graphite and on the reductionof undesired (toxic) metal impurities. Siloxane impurities introduce acertain amount of oxygen into the reaction system. As already describedabove in context with the activation of the graphite substrate, theoxygen content in the system has been found to exhibit an influence onthe surface porosity under the applied heating conditions. It is assumedthat in the CVD process the oxygen deriving from certain amounts ofsiloxane impurities exhibit an additional surface pore modificationeffect, which helps to lead the silane deeply into the pores of theactivated graphite under the selected process conditions.

It is further assumed that the oxygen deriving from the siloxaneimpurities captures and thus inactivates undesired metal impurities inthe DMS, which then drop down to the bottom of the tank and therewith“purify” the DMS from undesired metal contents.

It has been observed that certain amounts of siloxane impurities lead tothe formation of a precipitate or gel in the DMS tank, in the evaporatorand/or in the vapour-conducting conduit system. Such gel formation mayoccur when certain amounts of such siloxane impurities and of one ormore of the metal element impurities mentioned above are present, suchas in particular when certain amounts of such siloxane impurities and ofMn, Cu and/or Zn are present. Also residual moisture or residual watercontents may have a further impact on such gel formation. The amounts ofsuch siloxane impurities in the DMS precursor material used for the CVDmethod as defined below have been found as advantageous in view of thedesired SiC crystallinity, SiC quality and SiC tendril formation asdescribed herein.

Therefore, a further aspect of the invention relates to a process formanufacturing a silicon carbide (SiC) coated body in a chemical vapordeposition (CVD) method, using a dimethyldichlorosilane precursormaterial, wherein the dimethyldichlorosilane precursor materialcomprises

-   -   (A) dimethyldichlorosilane (DMS) as the main component and    -   (B) at least one further component being different from DMS and        being a siloxane compound or a mixture of siloxane compounds,        wherein the content of the further component (B) is >0 to 2.00        wt. %, relating to the dimethyldichlorosilane precursor        material.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises a content ofsiloxane compounds (B) of >0 to 1.500 wt. %, preferably >0 to <1.040 wt.%, preferably >0 to 1.000 wt. %, preferably >0 to 0.900 wt. %,preferably >0 to 0.850 wt. %, preferably >0 to 0.800 wt. %,preferably >0 to 0.750 wt. %, preferably >0 to 0.700 wt. %,preferably >0 to 0.600 wt. %, preferably >0 to 0.500 wt. %.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises a content ofsiloxane compounds (B) of >0 to not more than 0.500 wt. %, preferably >0to not more than 0.450 wt. %, preferably >0 to not more than 0.400 wt.%, preferably >0 to not more than 0.375 wt. %.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises >0 to 1.000 wt. %1,3-dichloro-1,1,3,3,-tetramethyldisiloxane, preferably >0 to 0.850 wt.%, preferably >0 to 0.800 wt. %, preferably >0 to 0.750 wt. %,preferably ≤0.725 wt. %, preferably 0.710 wt. %, preferably >0 to <700wt. %.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises >0 to 0.200 wt. %1,3-dichloro-1,1,3,5,5,5,-hexamethyltrisiloxane, preferably >0 to 0.150wt. %, preferably >0 to 0.140 wt. %, preferably >0 to 0.130 wt. %,preferably >0 to 0.120 wt. %, preferably >0 to <0.110 wt. %,preferably >0 to <0.100 wt. %.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises >0 to 0.200 wt. %octamethylcyclotetrasiloxane, preferably >0 to 0.190 wt. %,preferably >0 to 0.180 wt. %, preferably >0 to 0.170 wt. %,preferably >0 to 0.160 wt. %, preferably 0 to <0.150 wt. %.

Also metal element impurities may have an influence on the formation andlength of the SiC tendrils, e.g. as explained above.

Therefore, a further aspect of the invention relates to a process formanufacturing a silicon carbide (SiC) coated body in a chemical vapordeposition (CVD) method, using a dimethyldichlorosilane precursormaterial, wherein the dimethyldichlorosilane precursor materialcomprises

-   -   (A) dimethyldichlorosilane (DMS) as the main component and    -   (C) metal elements selected from the group consisting of Na, Mg,        Al, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Mo and W,        wherein the content of the metal elements (C) is 30.00 ppm wt.,        preferably 25.00 ppm wt., preferably ≤20.00 ppm wt., relating to        the dimethyldichlorosilane precursor material.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises

-   -   (A) dimethyldichlorosilane (DMS) as the main component and    -   (C) a metal element selected from Mn,        wherein the content of the Mn metal element (C) is <150 ppb wt.,        preferably <100 ppb wt., preferably <50 ppb wt., preferably <40        ppb wt., preferably <30 ppb wt., preferably <20 ppb wt.,        preferably the content of Mn is between >0 and 40 ppb wt.,        relating to the dimethyldichlorosilane precursor material.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises

-   -   (A) dimethyldichlorosilane (DMS) as the main component and    -   (C) a metal element selected from Cu,        wherein the content of the Cu metal element (C) is <50 ppb wt.,        preferably <45 ppb wt., preferably ≤40 ppb wt., preferably ≤35        ppb wt., preferably ≤30 ppb wt., preferably ≤25 ppb wt.,        preferably the content of Cu is between >0 and 25 ppb wt.,        relating to the dimethyldichlorosilane precursor material.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises

-   -   (A) dimethyldichlorosilane (DMS) as the main component and    -   (C) a metal element selected from Zn,        wherein the content of the Zn metal element (C) is <50 ppb wt.,        preferably <45 ppb wt., preferably ≤40 ppb wt., preferably ≤35        ppb wt., preferably ≤30 ppb wt., preferably ≤25 ppb wt.,        preferably the content of Zn is between >0 and 25 ppb wt.,        relating to the dimethyldichlorosilane precursor material.

A further aspect of the invention relates to a process for manufacturinga silicon carbide (SiC) coated body in a chemical vapor deposition (CVD)method, using a dimethyldichlorosilane precursor material, wherein thedimethyldichlorosilane precursor material comprises

-   -   (A) dimethyldichlorosilane (DMS) as the main component and    -   (C) the metal elements Mn, Cu and Zn,        wherein the content of the Mn, Cu and Zn metal elements (C) is        as defined in the aspects mentioned above.

A further particular aspect of the invention relates to a process formanufacturing a silicon carbide (SiC) coated body in a chemical vapordeposition (CVD) method, using a dimethyldichlorosilane precursormaterial, wherein the dimethyldichlorosilane precursor materialcomprises

-   -   (A) dimethyldichlorosilane (DMS) as the main component;    -   (B) at least one further component being different from DMS and        being a siloxane compound or a mixture of siloxane compounds as        defined in anyone of the aspects described above; and    -   (C) one or more of the metal elements as defined above,        preferably Mn, Cu and Zn,        wherein the content of the siloxane component(s) (B) are as        defined in anyone of the aspects described above and the content        of the metal elements (C), such as preferably of Mn, Cu and Zn,        is as defined in anyone of the aspects described above.

In a further aspect, the DMS with the defined purities is particularlyused in a chemical vapor deposition method, which is carried out usingH₂ as purge gas. Preferably, therein, the dimethyldichlorosilaneprecursor material is passed into the reaction chamber in a mixture withH₂. Further, therein the mixture of the dimethyldichlorosilane precursormaterial and H₂ may be obtained by introducing the H₂ gas into the tankcontaining the dimethyldichlorosilane precursor material, bubbling theH₂ through the tank and passing the mixture of thedimethyldichlorosilane precursor material and H₂ into the reactionchamber by pushing the mixture from the top of the tank.

In a further aspect, the dimethyldichlorosilane precursor material isfurther characterized by a content of one or more of the followingelements of

-   -   calcium <60.00 ppb wt.,    -   magnesium <10.00 ppb wt.,    -   aluminium <12.00 ppb wt.,    -   titanium <1.00 ppb wt.,    -   chromium <60.00 ppb wt.,    -   iron <25000 ppb wt.,    -   cobalt <1.00 ppb wt.,    -   nickel <30.00 ppb wt.,    -   zinc <40.00 ppb wt.,    -   molybdenum <10.00 ppb wt.

A further aspect of the present invention relates to the process asdescribed herein, wherein the dimethyldichlorosilane precursor materialis used for depositing silicon carbide on a porous graphite substratehaving an open porosity with a porosity degree of ≥6% and ≤15%,preferably 6% to 13%, more preferably 11 to 13%, more preferably on aporous graphite substrate having an open porosity with a porosity degreeof 6% to 15%, preferably of ≥6% and <15%, preferably of 6% to 13%, morepreferably of 6 to <12%, more preferably of 9 to 11.5%.

Therewith a silicon carbide coated body can be obtained, which ischaracterized by comprising a connected crystalline SiC material ofsubstantially tetrahedral crystalline SiC and comprising in particularconnected crystalline SiC material of substantially tetrahedralcrystalline SiC in the form of tendrils extending with a length of atleast 50 μm as described herein.

The defined DMS purities are similarly suitable and preferred in the CVDprocess described above.

The inventors of the present invention further found, that with thespecific selection of the CVD conditions and of the substrate materialas described herein, it is possible to control the CVD method to depositessentially stoichiometric SiC, being characterized by a Si:C ratio of1:1 on the substrate and in the form of tendrils.

Accordingly, a further aspect of the present invention relates to aprocess for manufacturing a silicon carbide (SiC) coated body in achemical vapor deposition (CVD) method, using graphite with an openporosity as a substrate and using dimethyldichlorosilane as the siliconsource and H₂ as purge gas to form substantially stoichiometric siliconcarbide, wherein the CVD process is carried out at a temperature in therange of 1000 to 1200° C. under atmospheric pressure, preferably at atemperature in the range of 1000 to <1200° C., preferably 1100 to 1150°C.

The CVD process is preferably carried out for a time period of at least30 minutes, preferably for a time period of >30 minutes and <12 hours,preferably of >45 minutes and <10 hours, more preferably for at leastone hour, more preferably for <10 hours, preferably for <8 hours,preferably for <6 hours, preferably for <4 hours, preferably for <3hours, most preferred within 1 to 2 hours.

Preferably, the CVD process is carried out with a total flow rate of themixture of DMS and H₂ of 25 to 200 slpm, preferably 40 to 180 slpm, morepreferably 60 to 160 slpm.

The inventors of the present invention surprisingly found that under thepresent process conditions substantially stoichiometric silicon carbideis deposited. Said substantially stoichiometric silicon carbide isfurther preferably deposited in the form of (crystalline) SiC grainshaving an average particle size of <10 μm, in particular of ≤7 μm, moreparticularly of ≤5 μm or even ≤4 μm or ≤3 μm or even ≤2 μm. Said SiCgrains may grow to form SiC crystals having an average particle size ofup to 30 μm (2 to <30 μm), preferably of not more than 20 μm (2 to 20μm), preferably of not more than 10 μm (2 to 10 μm).

Preferably, the substantially stoichiometric SiC crystals in the poresexhibit an average particle size of <10 μm, preferably of ≤7 μm,preferably of ≤5 μm, preferably of ≤4 μm, preferably of <3 μm,preferably of ≤2 μm.

Preferably, the substantially stoichiometric SiC crystals formed as thesurface coating layer exhibit a larger particle size, preferably anaverage particle size of ≥10 μm, preferably of ≥10 to 30 μm. This isprobably due to the limitation of the crystal growth inside the pores bythe space given by the small pore size.

It is however preferred to deposit the SiC with smaller grains andcrystal sizes, as smaller grains and crystals form SiC coatings ofhigher density, whereas larger grains and crystals form SiC coatings oflower density. Therefore the deposition of substantially stoichiometricsilicon carbide is desired. The amount of free Si in the deposited SiCis preferably controlled to be in the range as defined herein, therebyachieving the desired grains and crystal size as defined above.

In a further aspect thereof, said process is in particular carried outwithout adding methane gas and/or without using argon, accordingly it ispreferred that the presence of methane and/or argon is excluded. This isimportant as the presence of methane gas or argon negatively effects theformation of stoichiometric SiC when using DMS.

In a further aspect thereof, said process is in particular carried outwithout using any additional silane source besidesdimethyldichlorosilane. The advantageous SiC characteristics and crystalsize and quality can be achieved with DMS as the sole organosilanesource.

In a further aspect thereof, said process is in particular carried outby passing the dimethyldichlorosilane into the reaction chamber in agaseous mixture with H₂.

In a further aspect thereof, said process is in particular carried outby using a mixture of the dimethyldichlorosilane and H₂, which isobtained by introducing the H₂ gas into the tank containing thedimethyldichlorosilane, bubbling the H₂ through the tank and passing themixture of the dimethyldichlorosilane and H₂ into the reaction chamberby pushing the mixture from the top of the tank.

In a further aspect thereof, said process is in particular carried usingDMS, which comprises a certain content of (total) siloxane impurities asdefined above, such as of >0 to 2.000 wt. %, preferably >0 to 1.500 wt.%, preferably >0 to <1.040 wt. %, preferably >0 to 1.000 wt. %,preferably >0 to 0.900 wt. %, preferably >0 to 0.850 wt. %,preferably >0 to 0.800 wt. %, preferably >0 to 0.750 wt. %,preferably >0 to 0.700 wt. %, preferably >0 to 0.600 wt. %,preferably >0 to 0.500 wt. %.

In a further aspect thereof, said process is in particular carried usingDMS, which comprises a content of

-   -   Mn metal element of <150 ppb wt., preferably <100 ppb wt.,        preferably <50 ppb wt., preferably <40 ppb wt., preferably <30        ppb wt., preferably <20 ppb wt.; and/or    -   Cu metal element of <50 ppb wt., preferably <45 ppb wt.,        preferably ≤40 ppb wt., preferably ≤35 ppb wt., preferably 30        ppb wt., preferably ≤25 ppb wt.; and/or    -   Zn metal element of <50 ppb wt., preferably <45 ppb wt.,        preferably ≤40 ppb wt., preferably ≤35 ppb wt., preferably ≤30        ppb wt., preferably ≤25 ppb wt.

In a further aspect thereof, said process is in particular carried outby depositing SiC from dimethyldichlorosilane as the precursor materialon a porous graphite substrate.

To positively influence (trigger) the nucleation and formation of thedesired stoichiometric substantially tetrahedral SiC crystals a poroussubstrate is advantageous. Without being bound to theory it is assumedthat a porous substrate surface provides a suitable basis to facilitateand support nucleation and crystallization of the deposited SiC in thedesired quality.

Accordingly, it turned out as advantageous to use a porous surface todeposit the SiC thereon and thus achieve the desired effects describedherein.

The porosity characteristics of the substrate can be selected asdescribed herein, to achieve the above described characteristics of theSiC coated substrate. As mentioned above, it is preferred that theporous graphite substrate comprises pores with a surface pore diameterof up to 30 μm, preferably 10 to 30 μm.

In a further aspect thereof, said process is in particular carried outusing a porous graphite substrate with an open porosity with a porositydegree of ≥6% and ≤15%, preferably 6% to 13%, more preferably 11 to 13%.It turned out as particularly advantageous to use a graphite substratehaving an open porosity with a small porosity degree of 6% to 15%,preferably of ≥6% and <15%, preferably of 6% to 13%, more preferably of6 to <12%, more preferably of 9 to 11.5%.

Preferably, the porous graphite as described anywhere herein is used.

It is particularly preferred to use the CVD process described herein,wherein the dimethyldichlorosilane precursor material is used fordepositing substantially stoichiometric silicon carbide withsubstantially tetrahedral SiC crystals on the surface of the porousgraphite substrate and in the pores of the porous graphite substrate toform tightly connected crystalline SiC material in the form of tendrilsextending from the porous graphite surface into the graphite substrateand being tightly connected with the SiC surface coating.

In a further aspect thereof, in said process the amount of free Si inthe SiC deposited on the graphite substrate comprises not more thanabout 7 wt. %, preferably not more than about wt. 5%, more preferablynot more than about 3 wt. % free Si.

The inventors of the present invention further surprisingly found thatunder the specific CVD conditions as described herein, the particle sizeof the SiC grains correlate to the amount of DMS introduced into thereaction chamber. The introduction of lower amounts of DMS surprisinglyleads to the formation of smaller grains and crystals, whereas theintroduction of larger amounts of DMS surprisingly leads to theformation of larger grains and crystals. Smaller grains and crystalsfurther form SiC coatings of higher density, whereas larger grains andcrystals form SiC coatings of lower density. Therewith, the CVDdeposition can be controlled to provide multilayer SiC coatings havingvarying densities.

Accordingly, a further aspect of the present invention relates to aprocess for manufacturing a silicon carbide (SiC) coated body comprisingat least two SiC layer of different density, the process comprising thesteps

-   -   A) positioning a porous graphite substrate having an open        porosity in a process chamber;    -   B) heating the porous graphite substrate in the process chamber        to a temperature in the range of 1000 to 1200° C. under        atmospheric pressure in the presence of H₂ as purge gas;    -   C) depositing in a first deposition phase crystalline SiC grains        on the surface of the graphite substrate by introducing a        mixture of dimethyldichlorosilane (DMS) and H₂ into the process        chamber with a first amount of DMS;    -   D) increasing or reducing the amount of DMS and depositing in a        second deposition phase crystalline SiC grains on the SiC coated        graphite substrate of step C) by introducing a mixture of DMS        and H₂ into the process chamber with a second amount of DMS;    -   E) optionally repeating step D) one or more times, thereby        carrying out one or more additional steps of depositing in one        or more additional deposition phases crystalline SiC grains on        the SiC coated graphite substrate by introducing a mixture of        DMS and H₂ into the process chamber with one or more further        amounts of DMS;    -   F) cooling the body resulting from step E).

In a further aspect said process further comprises prior to step C) thefollowing step

-   -   B-2) introducing a mixture of dimethyldichlorosilane (DMS) and        H₂ for at least 30 minutes into the process chamber and        depositing in an infusion phase crystalline SiC grains in the        open pores of the graphite substrate by chemical vapor        deposition (CVD) and allow growing of the crystalline SiC grains        to SiC crystals until a connected crystalline SiC material in        the form of tendrils extending with a length of at least 50 μm        into the porous graphite substrate is formed.

In a further aspect said process comprises the following steps G) and H)following step F):

-   -   G) changing the position of the body resulting from step F); and    -   H) repeating step C) and optionally steps D) and E), thereby        depositing crystalline SiC grains on the surface of the porous        graphite substrate resulting from step F) by chemical vapor        deposition (CVD) and allow growing of the crystalline SiC grains        to substantially tetrahedral SiC crystals until one or more        further SiC layers are formed; followed by cooling the body        resulting from step H).

In a further aspect of said process in the optional step E) the amountof DMS is gradually increased.

In a further aspect of said process in step D) the second amount of DMSis twice as much as the first amount in step C).

In a further aspect of said process in step E) a third deposition phaseis carried out with a third amount of DMS, which is three times as muchas the first amount in step C).

In a further aspect of said process in step E) a third and fourthdeposition phase are carried out with a third and fourth amount of DMS,wherein the fourth amount of DMS is four times as much as the firstamount in step C).

In a further aspect of said process the DMS amounts in the depositionphases are controlled to effect the formation of smaller SiC crystalshaving smaller particle size by introducing a decreased amount of DMSand to effect the formation of larger SiC crystals having a largerparticle size by introducing an increased amount of DMS.

In a further aspect of said process the thickness of the SiC coatingsdeposited in the deposition phases is varied by carrying out theindividual deposition phases for varying time periods.

In a further aspect of said process the porous graphite substrate ofstep A) has a porosity degree of ≥6% and ≤15%, preferably 6% to 13%,more preferably 11 to 13%. More preferably, the porous graphitesubstrate of step A) has a porosity degree of ≥6% and <15%, preferably6% to 13%, more preferably 6 to <12%, more preferably 9 to 11.5% and/orcomprises pores with a surface pore diameter of 10 to 30 μm.

More preferably a porous graphite substrate as described anywhere hereinis used.

In a further aspect of said process the mixture of DMS and H₂ isobtained by introducing the H₂ as into the DMS tank, bubbling the H₂through the DMS in the tank and passing the mixture of DMS and H₂ intothe process chamber by pushing the mixture from the top of the tank.

In a further aspect of said process the dimethyldichlorosilane used forthe CVD deposition is characterized by having a content of siloxaneimpurities as defined above, preferably of >0 to 2.00 wt. %, preferablyof >0 to 1.500 wt. %, preferably of >0 to <1.040 wt. %.

In a further aspect of said process the dimethyldichlorosilane used forthe CVD deposition is characterized by having a content of metal elementimpurities as defined above, preferably of Mn, Cu and Zn impurities asdefined above.

More preferably, the dimethyldichlorosilane used for the CVD depositionis characterized by having a content of siloxane and metal impurities asdefined above in detail.

In a further aspect of said process step B-2) is carried out until aconnected crystalline SiC material in the form of tendrils extendingwith a length of at least 75 μm, preferably at least 100 μm, preferably75 to 200 μm is formed.

In a further aspect of said process the infusion phase of step B-2) iscarried out until an interfacial layer is formed, comprising the porousgraphite with SiC filled pores and having a thickness of at least 50 μm,preferably at least 75 μm, preferably at least 100 μm, preferably atleast 150 μm, preferably at least 200 μm, more preferably about 200 toabout 500 μm, wherein the interfacial layer is located between thegraphite substrate and the SiC surface layer formed in steps C) to E)and step H).

Preferably, the process is controlled to deposit in one or more of stepsC), D), E) and H) substantially tetrahedral crystalline SiC having anaverage particle size of ≥10 μm, preferably of ≥10 to 30 μm and/or whichis controlled to deposit in step B-2) substantially tetrahedralcrystalline SiC in the pores of the graphite substrate having an averageparticle size of <10 μm, preferably of ≤7 μm, preferably of ≤5 μm,preferably of ≤4 μm, preferably of ≤3 μm, preferably of ≤2 μm.

Preferably, the SiC deposition is carried out at a temperature in therange of 1000 to <1200° C., preferably 1100 to 1150° C.

Preferably, the infusion phase of step B-2) is carried out for a timeperiod of >30 minutes and <12 hours, preferably of >45 minutes and <10hours, more preferably for at least one hour, more preferably for <10hours, preferably for <8 hours, preferably for <6 hours, preferably for<4 hours, preferably for <3 hours, most preferred within 1 to 2 hours.

The SiC material deposited herein is characterized by a similarcrystallinity, grain/crystal size and purity etc. as described above.However, the density of the SiC deposited in the different steps varies.

Accordingly, with the process of the present invention it is possible toprovide an SiC coated article, wherein one or more selected surfaceareas of the graphite substrate are coated with the outer SiC coatinglayer. It is also possible to deposit the SiC coating in step E) and/orH) not over a complete surface of the porous graphite substrate but onlyto selected and discrete areas of a surface of the substrate. This canbe achieved e.g. by using a kind of mask as commonly used in establishedcoating techniques.

III. Products

A further aspect of the present invention relates to the products beingobtainable by the processes of the present invention, comprising theintermediate components such as the graphite substrate as well as theSiC coated articles.

1. Purified Graphite Member

A further aspect of the present invention relates to the purifiedgraphite member with a modified surface porosity, obtainable by aprocess as described above.

Preferably, such purified graphite member with a modified surfaceporosity has a chlorine content as defined above, preferably present inthe porous graphite member as defined above.

Preferably, the purified graphite member with a modified surfaceporosity of the present invention comprises pores with an enlargedaverage pore size (pore diameter) and comprises pores with an enlargedsurface pore diameter of ≥10 μm.

The grain size of the graphite is usually not effected by the processand accordingly the purified graphite member with a modified surfaceporosity according to the present invention has an average grain size of<0.05 mm, preferably of ≤0.04 mm, preferably <0.03 mm, preferably ≤0.028mm, preferably ≤0,025 mm, preferably ≤0.02 mm, preferably ≤0,018 mm,preferably ≤0.015 mm.

Preferably, such purified graphite member with a modified surfaceporosity has an open porosity with a porosity degree of ≥6% and ≤15%,preferably of about 6% to about 13%, preferably of about 11% to about13%. More preferably the purified graphite member has an open porositywith a porosity degree of 6% to 15%, preferably of ≥6% and <15%,preferably of 6% to 13%, more preferably of 6 to <12%, more preferablyof 9 to 11.5%.

Preferably, such purified graphite member with a modified surfaceporosity has a density as defined above.

Preferably, such purified graphite member with a modified surfaceporosity has a purity as defined above.

The purified graphite member with a modified surface porosity asdescribed herein may preferably be used as a substrate in a siliconcarbide coated graphite article.

Therein, the modified surface porosity can be characterized as describedabove in detail.

In particular, the purified graphite member with a modified surfaceporosity as defined herein is suitable as a substrate in a chemicalvapor deposition (CVD) method for depositing silicon carbide thereon,such as in particular in a CVD method as described herein, usingdimethyldichlorosilane (DMS) as the silane source or CVD precursor,preferably with H₂ as purge gas.

More particularly, the purified graphite member with a modified surfaceporosity as defined herein is suitable as a substrate in a chemicalvapor deposition (CVD) method for depositing silicon carbide in thepores of the purified graphite substrate, such as in particular in a CVDmethod as described herein, using dimethyldichlorosilane (DMS) as thesilane source or CVD precursor, preferably with H₂ as purge gas.

The purified graphite member with a modified surface porosity as definedherein is for the reasons explained above particularly suitable as asubstrate in a chemical vapor deposition (CVD) method for depositingsilicon carbide in the pores of the activated substrate forming aconnected substantially tetrahedral crystalline SiC material in the formof tendrils extending with a length of at least 50 μm.

By depositing SiC on a purified graphite member as described herein, itis possible, to provide graphite member with a silicon carbide layer onone or more surfaces and/or on one or more selected and discrete surfaceareas.

Accordingly, such purified graphite member with a modified surfaceporosity as described above are particularly suitable for manufacturingarticles for high temperature applications, susceptors and reactors,semiconductor materials, wafer.

2. Activated Graphite Substrate

A further aspect of the present invention relates to the activatedgraphite substrate with a modified surface porosity, obtainable by aprocess as described above.

Preferably, such activated graphite substrate with a modified surfaceporosity has a chlorine content as defined above, preferably present inthe porous graphite substrate as defined above.

Preferably, such activated graphite substrate with a modified surfaceporosity exhibits the above described surface pore modifications withthe enlarged surface pore diameters.

In particular, such activated graphite substrate with a modified surfaceporosity comprises pores with an enlarged average pore size (porediameter) and comprising pores with a surface pore diameter of ≥10 μm,preferably of ≥10 μm up to 30 μm.

Similar as explained above, such activated graphite substrate with amodified surface porosity has an average grain size of <0.05 mm,preferably of ≤0.04 mm, preferably ≤0.03 mm, preferably ≤0.028 mm,preferably ≤0,025 mm, preferably ≤0.02 mm, preferably 0,018 mm,preferably ≤0.015 mm.

Preferably, such activated graphite substrate with a modified surfaceporosity has an open porosity with a porosity degree of ≥6% and ≤15%,preferably of about 6% to about 13%, preferably of about 11% to about13%, even more preferably of 6% to 15%, preferably of ≥6% and <15%,preferably of 6% to 13%, more preferably of 6 to <12%, more preferablyof 9 to 11.5%.

Preferably, such activated graphite substrate with a modified surfaceporosity has a density as defined above.

Preferably, such activated graphite substrate with a modified surfaceporosity has a purity as defined above.

The activated graphite substrate with a modified surface porosity asdescribed herein may preferably be used as a substrate in a siliconcarbide coated graphite article.

In particular, the activated graphite substrate with a modified surfaceporosity as defined herein is suitable as a substrate in a chemicalvapor deposition (CVD) method for depositing silicon carbide thereon,such as in particular in a CVD method as described herein, usingdimethyldichlorosilane (DMS) as the silane source or CVD precursor,preferably with H₂ as purge gas.

In particular, the activated graphite substrate with a modified surfaceporosity as defined herein is suitable as a substrate in a chemicalvapor deposition (CVD) method for depositing silicon carbide in thepores of the activated graphite substrate, preferably forming aconnected substantially tetrahedral crystalline SiC material in the formof tendrils extending with a length of at least 50 μm, such as inparticular in a CVD method as described herein, usingdimethyldichlorosilane (DMS) as the silane source or CVD precursor,preferably with H₂ as purge gas.

By depositing SiC on a activated graphite substrate as described herein,it is possible, to provide a graphite substrate with a silicon carbidelayer on one or more surfaces and/or on one or more selected anddiscrete surface areas.

Accordingly, such activated graphite substrate with a modified surfaceporosity as described above are particularly suitable for manufacturingarticles for high temperature applications, susceptors and reactors,semiconductor materials, wafer.

IV. Silicon Carbide Coated Bodies

A further aspect of the present invention covers the silicon carbidecoated bodies (or articles) obtained from the process as describedabove.

Preferably, a further aspect of the present invention relates to siliconcarbide coated bodies (or articles), comprising

-   -   I) a porous graphite substrate having a porosity degree of 6% to        15%;    -   II) at least one SiC coating layer;    -   and    -   III) an interfacial layer, located between the graphite        substrate I) and the SiC coating layer II), comprising the        porous graphite and having pores with an average surface pore        diameter of 10 μm, wherein the pores filled with a connected        crystalline SiC material in the form of tendrils of at least 50        μm length, which extend from the at least one SiC coating        layer II) into the porous graphite substrate.

A further aspect of the present invention relates to the silicon carbidecoated bodies (or articles) described above, wherein the pores in theinterfacial layer III) are filled with a connected crystalline SiCmaterial in the form of tendrils extending with a length of at least 75μm, preferably at least 100 μm, preferably 75 to 200 μm. Regarding thedefinition of the pore filling, reference is made to the explanationsabove.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the interfaciallayer III) located between the graphite substrate I) and the SiC coatinglayer(s) II) exhibits a thickness of at least 100 μm, preferably of >100μm, more preferably of at least 200 μm, even more preferably of about200 to about 500 μm.

A further aspect of the present invention relates to the silicon carbidecoated bodies (or articles) described above, wherein the porous graphitesubstrate I) exhibits a porosity of >6% to <15% or a porosity in a rangeof about 6% to about 14%, about 6% to about 13%, about 6% to <13%, or aporosity in a range of >6% to about 15%, about 7% to about 15%, about 8%to 15%, about 9% to about 15%, about 10% to about 15%, about 11% toabout 15%, or a porosity in a range of ≥11% to about 13%. Even morepreferred is a porosity degree of 6% and <15%, more preferably 6% to13%, more preferably 6 to <12%, more preferably 9 to 11.5%.

Said porosity degree relates to the structure of the graphite and saidpores are filled with SiC as described herein. However, the meregraphite porosity is not affected or changed by the CVD method and thepresent porosity degree can thus be considered as a “SiC-filledporosity”.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) described above, wherein the at least oneSiC coating layer II) comprises >90 wt. silicon carbide (SiC).Preferably the SiC coating layer(s) comprise at least 91 wt. %, at least92 wt. %, at least 93 wt. %, at least 94 wt. %, at least 95 wt. %, or atleast 96 wt. % silicon carbide. More preferably, the SiC coatinglayer(s) comprises at least 97 wt. % silicon carbide (SiC), in each caserelative to the total weight of the SiC coating layer(s). As explainedabove, said silicon carbide is preferably substantially tetrahedralcrystalline SiC.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the at leastone SiC coating layer II) further comprises not more than about 10 wt.%, not more than about 9 wt. %, not more than about 8 wt. %, not morethan about 7 wt. %, not more than about 6 wt. %, not more than about 5wt. %, or not more than about 4 wt. % free Si. More preferably, the SiCcoating layer(s) comprise not more than about 3 wt. % free Si, in eachcase relative to the total weight of the SiC coating layer(s).

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the SiC coatinglayer II) covering the graphite substrate I) is a homogeneous andcontinuous, essentially impervious SiC layer.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the SiC coatinglayer(s) II) covering the graphite substrate is essentially free ofcracks, holes, spallings or other noticeable surface defects and/orexhibits essentially a continuous thickness over the whole coatedsurface area.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the interfaciallayer III) located between the graphite substrate I) and the SiC coatinglayer II) is formed by the porous graphite, wherein the pores comprise afilling of SiC, and wherein at least 70% of the walls of the open poresof the graphite are filled with the SiC. Regarding the definition of thepore filling, reference is made to the explanations above. As explainedtherein, the pore filling degree in accordance with the presentinvention relates to the degree of coating of the inner walls of theopen pores, of which preferably at least 70% are coated with a depositedSiC coating.

More preferably, the interfacial layer III) comprises a pore fillingdegree of at least about 75%, 80%, 85%, 90% of the walls of the openpores. The degree of pore filling can be determined as mentioned above.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the averageparticle size of the SiC crystals in the filled pores of the interfaciallayer III) is <10 μm, such as preferably >2 to <10 μm and/or the averageparticle size of the SiC crystals of the outer coating layer ii) is notmore than 30 μm, preferably ≥10 to 30 μm.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the interfaciallayer III) located between the graphite substrate I) and the SiC coatinglayer II) is formed by the porous graphite, wherein the pores comprise afilling of a connected substantially tetrahedral crystalline SiCmaterial in the form of extended tendrils, wherein said SiC materialcomprises >90 wt-% silicon carbide (SiC).

Preferably said SiC material in the pores of the interfacial layer III)comprises at least 91 wt. %, at least 92 wt. %, at least 93 wt. %, atleast 94 wt. %, at least 95 wt. %, or at least 96 wt. % silicon carbide.More preferably, the SiC material in the pores of the interfacial layerIII) comprises at least 97 wt. % SiC, in each case relative to the totalweight of the SiC material in the pore filling.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the interfaciallayer III) located between the graphite substrate I) and the SiC coatinglayer II) is formed by the porous carbon, wherein the pores comprise afilling of a a connected substantially tetrahedral crystalline SiCmaterial in the form of extended tendrils, wherein said SiC materialfurther comprises not more than about 10 wt. %, not more than about 9wt. %, not more than about 8 wt. %, not more than about 7 wt. %, notmore than about 6 wt. %, not more than about 5 wt. %, or not more thanabout 4 wt. % free Si. More preferably, the SiC material in the pores ofthe interfacial layer III) comprises not more than about 3 wt. % freeSi, in each case relative to the total weight of the SiC material in thepore filling.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the SiC in thepores and/or on the surface of the graphite substrate is substantiallystoichiometric SiC with a Si:C ratio of 1:1.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the SiC in thepores and/or on the surface of the graphite substrate has a densityclose to the theoretical density of SiC of 3.21 g/cm³. Preferably, thedeposited SiC has a density of at least 2.50 g/cm³, preferably in therange of 2.50 to 3.21 g/cm³, more preferably in the range of 3.00 to3.21 g/cm³.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the density ofthe tendrils in the interfacial layer (amount of tendrils per area) is≥6% and ≤15%, preferably 6% to 13%, more preferably 6 to ≤12%, morepreferably 9 to 11.5%.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, comprising ahomogeneous, dense and/or uniform distribution of the tendrils in theinterfacial layer.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, wherein the tendrilsare (tightly) connected with the SiC of the surface coating layer.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, comprising the SiClayer II) and optionally also the interfacial layer III) on one or moreselected and discrete surface areas of the graphite substrate.

The interfacial layer of the silicon carbide coated body of the presentinvention creates a coefficient of thermal expansion (CTE) averagingbetween the graphite substrate and the SiC coating layer for the entirebody. For example, the CTE mismatch between the substrate and the SiClayer can be reduced by about 20% in a silicon carbide coated bodywherein about 20% of the porous substrate are filled with SIC.Accordingly, a further aspect of the present invention relates to asilicon carbide coated body as described herein having an improvedcoefficient of thermal expansion between the graphite substrate and theSiC coating layer. The CTE according to the present invention can bedetermined by known methods.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, having an improvedresidual compressive load in the SiC layer, preferably higher than 190MPa, preferably higher than 50 MPa. The residual compressive loadaccording to the present invention can be determined by known methods.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, having an improvedimpact resistance. The impact resistance according to the presentinvention can be determined by known methods.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, having an improvedfracture toughness. The fracture toughness according to the presentinvention can be determined by known methods.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, having an improvedexfoliation, peeling and/or warpage resistance. The exfoliationresistance (strength) can be determined by known methods, e.g. asdescribed in US 2018/0002236 A1.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, having an improvedadhesion between the graphite substrate I) and the SiC coating layerII). The adhesion between the graphite substrate I) and the SiC coatinglayer II) according to the present invention can be determined by knownmethods.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles) as described herein, exhibiting an improvedrelation between the size of the outer (upper) surface of the SiCcoating layer to the size of the interfacial layer. The relation betweenthe size of the outer (upper) surface of the SiC coating layer to thesize of the interfacial layer according to the present invention can bedetermined by known methods.

A further aspect of the present invention relates to silicon carbidecoated bodies (or articles), comprising

-   -   I-A) a porous graphite substrate having a porosity degree of 6%        to 15% and comprising pores with a surface pore diameter of 10        to 30 μm and    -   II-A) at least two SiC coating layer of different density        covering the porous graphite substrate; and optionally    -   III-A) an interfacial layer located between the graphite        substrate and the SiC coating layers comprising the porous        graphite and pores filled with a tightly connected substantially        tetrahedral crystalline SiC material in the form of tendrils        extending with a length of at least 50 μm from the at least one        SiC coating layer into the porous graphite substrate.

In a further aspect of such multilayer SiC coated articles the at leasttwo SiC coating layer(s) II-A) are characterized by different crystalsizes.

In a further aspect of such multilayer SiC coated articles the graphitesubstrate has a porosity of 6% and <15%, preferably 6% to 13%, morepreferably 11 to 13%, more preferably of 6% and <15%, preferably 6% to13%, more preferably 6 to <12%, more preferably 9 to 11.5%.

Preferably, the graphite substrate comprises pores with a surface porediameter of up to 30 μm.

Preferably, the graphite substrate has an average pore size (porediameter) of 0.4-5.0 μm, preferably 1.0 to 4.0 μm and comprises poreswith a surface pore diameter of up to 30 μm, preferably up to 20 μm,preferably up to 10 μm, preferably pores with a surface pore diameter of10 to 30 μm are present.

Preferably, the graphite substrate has an average grain size of <0.05mm, preferably of <0.04 mm, preferably <0.03 mm, preferably <0.028 mm,preferably <0,025 mm, preferably <0.02 mm, preferably <0,018 mm,preferably <0.015 mm.

Preferably, the graphite substrate has a density of ≥1.50 g/cm³,preferably 1.70 g/cm³, preferably ≥1.75 g/cm³.

In a further aspect of such multilayer SiC coated articles theinterfacial layer III-A) is present, having pores filled with a tightlyconnected substantially tetrahedral crystalline SiC material in the formof tendrils extending with a length of at least 75 μm, preferably atleast 100 μm, preferably 75 to 150 μm into the graphite substrate.

V. Use

A further aspect of the present invention relates to the use of thepurified, chlorinated and/or activated graphite members, as well as thevarious silicon carbide coated bodies (or articles) obtainable by themethods as described herein for manufacturing articles for hightemperature applications, susceptors and reactors, semiconductormaterials, wafer etc.

The present invention is further illustrated by the Figures and thefollowing examples without being limited thereto.

DESCRIPTION OF THE FIGURES AND THE REFERENCE SIGNS

FIG. 1 shows a SEM image with a 680 fold magnification of a siliconcarbide coated body according to the present invention with a graphitesubstrate (1) and SiC tendrils (4) in the interfacial layer (3) thereofas well as the SiC coating layer (2). It can be seen that theinterfacial layer (3) has a thickness of approximately 200 μm, i.e. SiCtendrils (4) extend into the porous graphite substrate (1) with a lengthof at least 50 μm. The SiC coating layer (2) has a thickness ofapproximately 50 μm

FIG. 2 shows a SEM image with a 1250 fold magnification of a siliconcarbide coated body with a multilayer SiC coating of different density.The different SiC coating layers exhibit different thickness with afirst SiC layer (2-A) of approximately 43 μm thickness, a second SiClayer (2-B) of approximately 7 μm thickness, and a third SiC layer (2-C)of approximately 50 μm thickness. The image further shows the tendrils(4) with the SiC pore filling in the form of a SiC coating of the innerwalls of the open pores (5) in the interfacial layer (3).

FIG. 3 shows a SEM image of a silicon carbide coated body with a SiCcoating layer (2) of nearly 100 μm thickness on the porous graphitesubstrate (1) but without formation of tendrils and an interfaciallayer. The open pores (6) of the graphite substrate (1) are wellapparent.

FIG. 4 shows a SEM image with a 510 fold magnification of a siliconcarbide coated body with a SiC coating layer (2) of more than 50 μmthickness on the porous graphite substrate (1) but without formation oftendrils and an interfacial layer due to the use of argon as purge gas.The open pores (6) of the graphite substrate (1) are well apparent.

FIGS. 5a and 5b show a SEM image with a 500 fold magnification of a topview on the SiC tendrils (4); therefore, the graphite substrate wasburnt off in air, morphology and distribution of the tendrils isvisible, the distribution of tendril is very uniform and dense

FIG. 6a shows a SEM image with a 390 fold magnification of across-sectional view of SiC tendrils (4), which connect with the SiCcoating layer (2) very firmly

FIG. 6b shows a SEM image with a 2000 fold magnification of thecross-sectional view of SiC tendrils (4), which connect with the SiCcoating layer (2) very firmly

FIGS. 7a and 7b show a SEM image with a 2000 fold magnification of aporous graphite material prior to the purification and activationprocess of the present invention (pre-product) having quite small poreswherein the pores have a pore size/diameter <10 μm

FIG. 7c shows the pore distribution and the average pore size of saidporous graphite material prior to the purification and activationprocess of the present invention (pre-product)

FIGS. 8a and 8b show a SEM image with a 2000 fold magnification of aporous graphite material after the activation process of the presentinvention clearly showing the modified surface porosity with thesignificantly enlarged surface pores, now comprising a significantamount of enlarged pores having a pore size/diameter ≥10 μm

FIG. 8c shows the pore distribution and the average pore size of saidporous graphite material after the activation process of the presentinvention illustrating the increased porosity degree and the increasedaverage pore size compared to the graphite material prior to theactivation process

FIG. 9 illustrates the critical temperature dependency and its influenceon SiC nucleation, growth and crystal formation in a CVD process

FIG. 10 shows a SEM image with a 3500 fold magnification of a top viewon the improved SiC material of the present invention with thesubstantially tetrahedral crystallinity and the crystal size up to 10 to30 μm being clearly visible

FIG. 11 shows an XRD pattern of the improved SiC material of the presentinvention showing a very sharp p-SiC crystallinity peak and showing verylittle side-product peaks or amorphous SiC, which confirms the highpurity and crystallinity of the SiC formed in the process of the presentinvention

-   (1) porous graphite substrate-   (2) SiC coating layer-   (2-A), (2-B), (2-C) SiC coating layers of different density-   (3) interfacial layer with-   (4) tendrils formed in open pores-   (5) SiC coating on the inner walls of open pores-   (6) open pores in the graphite substrate-   (7) tight connection between tendrils and coating layer-   (8) tetrahedral crystals

VI. Examples Example 1—Activation and Chlorination of a Graphite Memberand Tendril Formation

A porous graphite member was activated, purified and subjected to achlorination treatment as described in the present invention.

The following chlorine content was measured in the chlorinated graphitemember:

element graphite member Cl 0.06 ppm wt.

The formation of activated graphite with enlarged surface porosity hasbeen shown in FIGS. 7a to c compared to FIGS. 8a to c . The SEM has beenprepared as described above.

The chlorinated graphite member was used as a porous graphite substrate(1) in a CVD deposition method as described herein.

In the CVD method SiC tendrils (4) according to the present inventionwere formed in the pores (6) of the accordingly chlorinated graphitesubstrate, as shown in FIGS. 1, 2, 3, 4, 5 a, 5 b, 6 a and 6 b.

The SiC characteristics and quality described herein has been shown inFIGS. 10 and 11.

Example 2—Influence of the Purge Gas

A silicon carbide coated body was prepared with the process of thepresent invention using H₂ as the purge gas.

As a comparative Example, argon was used as purge gas.

As becomes apparent from FIGS. 1 and 4, the use of argon does not leadto the formation of tendrils (4).

Example 3—Multilayer SiC-Coating

A silicon carbide coated body was prepared with the process of thepresent invention, therein varying the amounts of DMS for preparing amultilayer SiC coating having varying densities (2-A), (2-B), (2-C) etc.

Therein, the following DMS amounts were introduced into the processchamber of a laboratory size test reactor using H₂ as the carrier gas inthe deposition phases:

Deposition phase DMS amount 1. approximately 0.5 g/minute 2.approximately 1.0 g/minute 3. approximately 1.5 g/minute 4.approximately 2.0 g/minute

The SiC coatings deposited in the first to fourth deposition phaseshowed varying crystal sizes, which increased with increasing DMSamounts, leading to SiC coating layers with decreasing density.

A further example, illustrating the SiC multilayer structure due tovarying DMS amounts is shown in FIG. 2.

Example 4—DMS Purity (Siloxanes)

A silicon carbide coated body was prepared with the process of thepresent invention with DMS of varying siloxane impurities.

DMS with the following amounts of siloxane impurities were used:

Siloxane compound DMS Sample A DMS Sample B DMS Sample C1,3-dichloro-1,1,3,3,- 0.193 wt. % 0.103 wt. % 0.710 wt. %tetramethyldisiloxane 1,3-dichloro-1,1,3,5,5,5,- 0.042 wt. % 0.072 wt. %0.110 wt. % hexamethyltrisiloxane octamethylcyclotetrasiloxane 0.112 wt.% 0.157 wt. % 0.156 wt. % total amount of siloxane 0.389 wt. % 0.375 wt.%  1.04 wt. % impurities total amount of impurities 0.119 wt. % 0.580wt. % 1.239 wt. %

With DMS according to sample A and B the formation of SiC tendrilsoccurred according to the present invention.

With DMS according to sample C no sufficient formation of SiC tendrilsoccurred.

Further, the following ranges were found as effective with respect tothe desired tendril formation:

Total Siloxane Content Tendril formation >2.00 wt. % − 0.50 to 2.00 wt.% + <0.50 wt. % ++ “−” represents no or insufficient tendril formationin the open pores “+” represents moderate to low tendril formation inthe open pores “++” represents adequate to optimum tendril formation inthe open pores

Example 5—DMS Purity (Mn)

A silicon carbide coated body was prepared with the process of thepresent invention with DMS of varying manganese impurities.

DMS with the following amounts of manganese impurities were used:

metal element DMS Sample A DMS Sample B DMS Sample C manganese (Mn) 2ppb wt. 11 ppb wt. 150 ppb wt.

With DMS according to sample A and B the formation of SiC tendrilsoccurred according to the present invention.

With DMS according to sample C no sufficient formation of SiC tendrilsoccurred.

Further, the following ranges were found as effective with respect tothe desired tendril formation:

Total Manganese Content Tendril formation ≥150 ppb wt. − 40 to 150 ppbwt. + <40 ppb wt. ++ “−” represents no or insufficient tendril formationin the open pores “+” represents moderate to low tendril formation inthe open pores “++” represents adequate to optimum tendril formation inthe open pores

Example 6—DMS Purity (Cu)

A silicon carbide coated body was prepared with the process of thepresent invention with DMS of varying copper impurities.

DMS with the following amounts of copper impurities were used:

metal element DMS Sample A DMS Sample B DMS Sample C copper (Cu) 1 ppbwt. 18 ppb wt. 41 ppb wt.

With DMS according to sample A and B the formation of SiC tendrilsoccurred according to the present invention.

With DMS according to sample C no sufficient formation of SiC tendrilsoccurred.

Further, the following ranges were found as effective with respect tothe desired tendril formation:

Total Copper Content Tendril formation ≥50 ppb wt. − 30 to <50 ppb wt. +<30 ppb wt. ++ “−” represents no or insufficient tendril formation inthe open pores “+” represents moderate to low tendril formation in theopen pores “++” represents adequate to optimum tendril formation in theopen pores

Example 7—DMS Purity (Zn)

A silicon carbide coated body was prepared with the process of thepresent invention with DMS of varying zinc impurities.

DMS with the following amounts of zinc impurities were used:

metal element DMS Sample A DMS Sample B DMS Sample C zinc (Zn) 1 ppb wt.19 ppb wt. 42 ppb wt.

With DMS according to sample A and B the formation of SiC tendrilsoccurred according to the present invention.

With DMS according to sample C no sufficient formation of SiC tendrilsoccurred.

Further, the following ranges were found as effective with respect tothe desired tendril formation:

Total Zinc Content Tendril formation ≥50 ppb wt. − 30 to <50 ppb wt. +<30 ppb wt. ++ “−” represents no or insufficient tendril formation inthe open pores “+” represents moderate to low tendril formation in theopen pores “++” represents adequate to optimum tendril formation in theopen pores

Example 8—DMS Purity (Siloxane Plus Mn Plus Cu Plus Zn)

The following ranges of total siloxane content in the presence of Mn, Cuand Zn metal impurities were found as effective with respect to thedesired tendril formation:

Total Siloxane Total Manganese Total Copper Total Zinc Tendril ContentContent Content Content formation >2.00 wt. % ≥150 ppb wt. ≥50 ppb wt.≥50 ppb wt. − 0.50 to 2.00 wt. % 40 to 150 ppb wt. 30 to <50 ppb wt. 30to <50 ppb wt. + <0.50 wt. % <40 ppb wt. <30 ppb wt. <30 ppb wt. ++ “−”represents no or insufficient tendril formation in the open pores “+”represents moderate to low tendril formation in the open pores “++”represents adequate to optimum tendril formation in the open pores

1. A method of manufacturing a silicon carbide coated graphite body bychemical vapor deposition, comprising: providing as a porous graphitebody is a porous graphite substrate having an open porosity into areaction chamber; exposing the porous graphite body todimethyldichlorosilane and gaseous H₂; and depositing a substantiallystoichiometric silicon carbide, having a Si:C ratio of 1:1, withsubstantially tetrahedral silicon carbide crystals on the porousgraphite substrate, wherein the the depositing is carried out at atemperature in a range of 1000 to 1200° C. at atmospheric pressure. 2.The method of claim 1, further comprising at least one of: exposing theporous graphite substrate to a silane gas other thandimethyldichlorosilane while exposing the porous graphite substrate todimethyldichlorosilane and gaseous H₂; and exposing the porous graphitesubstrate to a methane gas while exposing the porous graphite substrateto dimethyldichlorosilane and gaseous H₂.
 3. The method of claim 1,wherein exposing the porous graphite body to dimethyldichlorosilane andgaseous H₂ is performed for at least 30 minutes.
 4. The method of claim1, wherein the dimethyldichlorosilane is flowed into the reactionchamber in a gaseous mixture with H₂ to form a mixture ofdimethyldichlorosilane and H₂.
 5. The method of claim 4, wherein themixture of dimethyldichlorosilane and H₂ is obtained by introducing theH₂ into a volume containing the dimethyldichlorosilane, bubbling the H₂through the dimethyldichlorosilane and flowing a resulting mixture ofdimethyldichlorosilane and H₂ into the reaction chamber by pressure inthe volume, over the dimethyldichlorosilane, pushing the mixture ofdimethyldichlorosilane and H₂ from the volume through an outlet providedtherefor.
 6. The method of claim 1, wherein the dimethyldichlorosilanecomprises siloxane mixed therewith at a value of 0 to 2.000 by weight.7. The method of claim 1, wherein the dimethyldichlorosilane comprises ametal element included therewith at a value of <150 ppb by weight. 8.The method of claim 1, wherein the porous graphite substrate has an openporosity of 6% to 15%.
 9. The method of claim 1, wherein the porousgraphite substrate comprises pores with a diameter of 10 to 30 pm, wherethe pore opens to an outer surface of the porous graphite substrate. 10.The method of claim 1, wherein the substantially stoichiometric siliconcarbide with substantially tetrahedral silicon carbide crystals isformed on an outer surface of the porous graphite substrate and in poresof the porous graphite substrate to form tightly connected crystallinesilicon carbide material in a form of tendrils extending from a surfaceof the porous graphite substrate into the pores of the porous graphitesubstrate and is connected with the porous graphite substrate.
 11. Themethod of claim 1, wherein the amount of free silicon in the siliconcarbide deposited on the porous graphite substrate and into pores of theporous graphite substrate comprises not more than about 7 wt. %.
 12. Asilicon carbide coated component of a high temperature processingapparatus, comprising: a porous graphite substrate having poresextending inwardly of an outer surface of the porous graphite substrate;and a substantially stoichiometric silicon carbide layer, having a Si:Cratio of 1:1 and substantially tetrahedral silicon crystal structureformed on the outer surface of the porous graphite substrate andanchored thereto by tendrils of silicon carbide extending into the poresof the porous graphite substrate.
 13. The silicon carbide coatedcomponent of claim 12, wherein tetrahedral SiC crystals extend commonlywithin the substantially stoichiometric silicon carbide layer and atendril extending therefrom and into a pore of the porous graphitesubstrate.
 14. The silicon carbide coated component of claim 12, whereinthe porous graphite substrate has an open porosity of 6% to 15%.
 15. Thesilicon carbide coated component of claim 12, wherein the porousgraphite substrate comprises pores with a diameter of 10 to 30 pm wherethe pore opens to the outer surface of the porous graphite substrate.16. The silicon carbide coated component of claim 12, wherein thesubstantially stoichiometric silicon carbide layer includes traceelements of at least one metal therein.
 17. A semiconductor processingchamber component, comprising: a porous graphite substrate having poresextending inwardly of an outer surface of the porous graphite substrate;and a substantially stoichiometric silicon carbide layer, having a Si:Cratio of 1:1 and substantially tetrahedral SiC crystal structure formedon the outer surface of the porous graphite substrate and anchoredthereto by tendrils of silicon carbide extending into the pores of theporous graphite substrate.
 18. The semiconductor processing chambercomponent of claim 17, wherein tetrahedral SiC crystals extend commonlywithin the substantially stoichiometric silicon carbide layer and atendril extending therefrom and into a pore of the porous graphitesubstrate.
 19. The semiconductor processing chamber component of claim17, wherein the porous graphite substrate has an open porosity of 6% to15%.
 20. The semiconductor processing chamber component of claim 17,wherein the porous graphite substrate comprises pores with a diameter of10 to 30 pm where the pore opens to the outer surface of the porousgraphite substrate.